Moteur de recherche de fiches techniques de composants électroniques |
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AMS-IRDK250-16 Fiches technique(PDF) 2 Page - American Microsemiconductor |
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AMS-IRDK250-16 Fiches technique(HTML) 2 Page - American Microsemiconductor |
2 / 2 page AMS-IRDK250-08 Specifications Sheet American Microsemiconductor Inc. Page 2 of 2 133 Kings Road, Madison, NJ 07940 AS/EN/JISQ/ 9100:2009 REV C and ISO 9001:2008 Certificate No: 45325 Tel. 973-377-9566 fax. 973-377-3078 http://www.americanmicrosemiconductor.com Electrical characteristics: Symbol Parameter Test condition Rating Unit IRRM Peak off-state repetitive current VD=VDRM, sine half wave, Tjm 20 mA VFM Peak forward voltage IFM =1000A, Tj=25 C 1.4 V Rth(j-c) Thermal resistance junction-case Single-side heat dissipation, sine half wave 0.14 C/W Transient thermal impedance (junction-case) Time (s) On-state surge current vs cycles Cycles @50Hz I 2t Characteristic Time (ms) On-state current vs voltage characteristic On-state peak current (A) |
Numéro de pièce similaire - AMS-IRDK250-16 |
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Description similaire - AMS-IRDK250-16 |
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