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S29GL01GT12TFByyx Datasheet(Fiches technique) 18 Page - Cypress Semiconductor

Numéro de pièce S29GL01GT12TFByyx
Description  1 Gbit (128 Mbyte), 512 Mbit (64 Mbyte)
Télécharger  105 Pages
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Fabricant  CYPRESS [Cypress Semiconductor]
Site Internet  http://www.cypress.com
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 18 page
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Document Number: 002-00247 Rev. *G
Page 18 of 105
S29GL01GT, S29GL512T
4.
Read Operations
4.1
Asynchronous Read
Each read access may be made to any location in the memory (random access). Each random access is self-timed with the same
latency from CE# or address to valid data (tACC or tCE).
4.2
Page Mode Read
Each random read accesses an entire 32-byte Page in parallel. Subsequent reads within the same Page have faster read access
speed. The Page is selected by the higher address bits (Amax-A4), while the specific word of that Page is selected by the least
significant address bits A3-A0 (A3-A-1 in x8 mode). The higher address bits are kept constant and only A3-A0 (A3-A-1 in x8 mode)
changed to select a different word in the same Page. This is an asynchronous access with data appearing on DQ15-DQ0 (DQ7-DQ0
in x8 mode) when CE# remains Low, OE# remains Low, and the asynchronous Page access time (tPACC) is satisfied. If CE# goes
High and returns Low for a subsequent access, a random read access is performed and time is required (tACC or tCE).




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