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AUIRFS6535 Datasheet(Fiches technique) 2 Page - Infineon Technologies AG

Numéro de pièce AUIRFS6535
Description  AUTOMOTIVE GRADE
Télécharger  12 Pages
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Fabricant  INFINEON [Infineon Technologies AG]
Site Internet  http://www.infineon.com
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AUIRFS/L6535
2
2015-12-4
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Limited by TJmax, starting TJ = 25°C, L = 3.6mH, RG = 50, IAS = 11A, VGS =10V. Part not recommended for use above this value.
Pulse width
1.0ms; duty cycle  2%.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
This value determined from sample failure population, starting TJ = 25°C, L = 3.6mH, RG = 50, IAS = 11A, VGS =10V.
This is applied to D2Pak When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and
soldering techniques refer to application note #AN-994
Ris measured at TJ approximately 90°C.
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
300
–––
–––
V
VGS = 0V, ID = 250µA
V(BR)DSS/TJ
Breakdown Voltage Temp. Coefficient
–––
0.39
–––
V/°C Reference to 25°C, ID = 5.0mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
148
185
m
 VGS = 10V, ID = 11A 
VGS(th)
Gate Threshold Voltage
3.0
–––
5.0
V
VDS = VGS, ID = 150µA
gfs
Forward Trans conductance
15
–––
–––
S
VDS = 50V, ID = 11A
IDSS
Drain-to-Source Leakage Current
–––
–––
20
µA
VDS = 300V, VGS = 0V
–––
–––
250
VDS = 300V,VGS = 0V,TJ =125°C
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Total Gate Charge
–––
38
57
nC  
ID = 11A
Qgs
Gate-to-Source Charge
–––
12
–––
VDS = 150V
Qgd
Gate-to-Drain Charge
–––
13
–––
VGS = 10V
td(on)
Turn-On Delay Time
–––
15
–––
ns
VDD = 300V
tr
Rise Time
–––
16
–––
ID = 11A
td(off)
Turn-Off Delay Time
–––
22
–––
RG= 5.0
tf
Fall Time
–––
10
–––
VGS = 10V 
LD
Internal Drain Inductance
–––
4.5
–––
nH  
Between lead,
6mm (0.25in.)
LS
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
Ciss
Input Capacitance
–––
2340 –––
pF  
VGS = 0V
Coss
Output Capacitance
–––
195
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
40
–––
ƒ = 1.0MHz
Coss
Output Capacitance
–––
1750 –––
VGS = 0V, VDS = 1.0V ƒ = 1.0MHz
Coss
Output Capacitance
–––
66
–––
VGS = 0V, VDS = 240V ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
130
–––
VGS = 0V, VDS = 0V to 240V 
Diode Characteristics  
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
–––
–––
19
A
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
–––
–––
100
integral reverse
(Body Diode)
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.3
V
TJ = 25°C,IS = 11A,VGS = 0V 
trr
Reverse Recovery Time
–––
190
285
ns TJ = 25°C ,IF = 11A, VDD = 150V
Qrr
Reverse Recovery Charge
–––
990 1485
nC
di/dt = 100A/µs 
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)




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