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S29GL01GT13TFNyyxx Datasheet(Fiches technique) 44 Page - Cypress Semiconductor

Numéro de pièce S29GL01GT13TFNyyxx
Description  1 Gbit (128 Mbyte), 512 Mbit (64 Mbyte)
Télécharger  105 Pages
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Fabricant  CYPRESS [Cypress Semiconductor]
Site Internet  http://www.cypress.com
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Document Number: 002-00247 Rev. *G
Page 44 of 105
S29GL01GT, S29GL512T
5.7
Embedded Algorithm Performance Table
The Joint Electron Device Engineering Council (JEDEC) standard JESD22-A117 defines the procedural requirements for performing
valid endurance and retention tests based on a qualification specification. This methodology is intended to determine the ability of a
flash device to sustain repeated data changes without failure (program/erase endurance) and to retain data for the expected life
(data retention). Endurance and retention qualification specifications are specified in JESD47 or may be developed using
knowledge-based methods as in JESD94.
Notes:
1. Not 100% tested.
2. Typical program and erase times assume the following conditions: 25°C, 3.0V VCC, 10,000 cycle, and a random data pattern.
3. Effective write buffer specification is based upon a 512-byte write buffer operation.
4. 512-byte load is not supported in x8 mode.
5. In the pre-programming step of the Embedded Erase algorithm, all words are programmed to 0000h before Sector and Chip erasure.
6. System-level overhead is the time required to execute the bus-cycle sequence for the program command. See Table 7.1, Command Definitions x16 on page 48 for
further information on command definitions.
Table 5.7 Embedded Algorithm Characteristics (
40°C to +85°C)
Parameter
Min
Typ
(Note 2)
Max (Note 3)
Unit
Comments
Sector Erase Time 128 kbyte
535
3500
ms
Includes pre-programming prior to
erasure (Note 7)
Chip Erase
GL512T
274
1792 (Note 1)
s
GL01GT
548
3584 (Note 1)
s
Single Word Programming Time (Note 1)
160
750
µs
Buffer Programming Time
2-byte (Note 1)
160
750
µs
32-byte (Note 1)
195
750
64-byte (Note 1)
219
750
128-byte
(Note 1)
258
750
256-byte
(Note 1)
327
750
512-byte
(Note 6)
451
750
Effective Write Buffer Program
Operation per Word
512-byte
1.76
µs
Sector Programming Time 128 kB
(full Buffer Programming)
115.4
192
ms
(Note 8)
Erase Suspend Latency (tESL)
40
µs
Program Suspend Latency (tPSL)
40
µs
Erase Resume to next Erase Suspend (tERS)
100
µs
Minimum of 60 µs but
 typical periods
are needed for Erase to progress to
completion.
Program Resume to next Program Suspend (tPRS)
100
µs
Minimum of 60 µs but
 typical periods
are needed for Program to progress to
completion.
Evaluate Erase Status (tEES)25
30
µs
Blank Check
6.2
8.5
ms
NOP (Number of Program-operations, per Line)
256




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