S29GL01GT11FHVyyx datasheet(82/105 Pages) CYPRESS

No de pièce	S29GL01GT11FHVyyx

Description	1 Gbit (128 Mbyte), 512 Mbit (64 Mbyte)

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Fabricant	CYPRESS [Cypress Semiconductor]

Site Internet	http://www.cypress.com

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82 / 105 page

Document Number: 002-00247 Rev. *G

Page 82 of 105

S29GL01GT, S29GL512T

11.4.2 Asynchronous Write Operations

Note:

1. Not 100% tested.

Figure 11.8 Back to Back Write Operation Timing Diagram

Note:

1. Address are Amax:A0 in word mode; Amax:A-1 in byte mode, Data are DQ15-DQ0 in word mode; DQ7-DQ0 in byte mode.

Table 11.9 Write Operations

Parameter

Description

VIO = 2.7V

to VCC

VIO = 1.65V to

VCC

Unit

JEDEC

Std

tAVAV

tWC

Write Cycle Time (Note 1)

Min

60

ns

tAVWL

tAS

Address Setup Time

Min

0

ns

tASO

Address Setup Time to OE# Low during toggle bit polling

Min

15

ns

tWLAX

tAH

Address Hold Time

Min

45

ns

tAHT

Address Hold Time From CE# or OE# High during toggle bit polling

Min

0

ns

tDVWH

tDS

Data Setup Time

Min

30

ns

tWHDX

tDH

Data Hold Time

Min

0

ns

tGHWL

Read Recovery Time Before Write

(OE# High to WE# Low)

Min

0

ns

tELWL

tCS

CE# Setup Time

Min

0

ns

tWHEH

tCH

CE# Hold Time

Min

0

ns

tWLWH

tWP

WE# Pulse Width

Min

25

ns

tWHWL

tWPH

WE# Pulse Width High

Min

20

ns

tSEA

Sector Erase Time-Out

Min

50

µs

Amax-A0

CE#

OE#

WE#

DQ15-DQ0

tDS

tDH

tWP

tAS

tAH

tWPH

tWC

tCS

tCH

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Description similaire - S29GL01GT11FHVyyx

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Cypress Semiconductor	S29GL01GS	1Mb / 108P	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory
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Hitachi Semiconductor	HB28D032MM2	329Kb / 88P	MultiMediaCard 16 Mbyte/32 Mbyte/64 Mbyte/128 MByte
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SPANSION	S25FL512SAGMFI010	1Mb / 140P	512 Mbit (64 Mbyte) MirrorBit짰 Flash Non-Volatile Memory

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