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S25FL116K Fiches technique(PDF) 6 Page - Cypress Semiconductor

No de pièce S25FL116K
Description  16 Mbit (2 Mbyte), 32 Mbit (4 Mbyte), 64 Mbit (8 Mbyte) 3.0V SPI Flash Memory
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Fabricant  CYPRESS [Cypress Semiconductor]
Site Internet  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

S25FL116K Fiches technique(HTML) 6 Page - Cypress Semiconductor

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Document Number: 002-00497 Rev. *E
Page 6 of 90
S25FL116K, S25FL132K, S25FL164K
1.1.2.2
Commands Not Supported
The following S25FL-K and S25FL-P commands are not supported:
Quad Page PGM (32h)
Half-Block Erase 32K (52h)
Word read Quad I/O (E7)
Octal Word Read Quad I/O (E3h)
MFID dual I/O (92h)
MFID quad I/O (94h)
Read Unique ID (4Bh)
1.1.2.3
New Features
The S25FL1-K introduces new features to low density SPI category memories:
Variable read latency (number of dummy cycles) for faster initial access time or higher clock rate read commands
Industrial Plus and Extended temperature range
Volatile configuration option in addition to legacy non-volatile configuration
1.2
Glossary
Command. All information transferred between the host system and memory during one period while CS# is low. This includes
the instruction (sometimes called an operation code or opcode) and any required address, mode bits, latency cycles, or data.
Flash. The name for a type of Electrical Erase Programmable Read Only Memory (EEPROM) that erases large blocks of
memory bits in parallel, making the erase operation much faster than early EEPROM.
High. A signal voltage level ≥ VIH or a logic level representing a binary one (1).
Instruction. The 8-bit code indicating the function to be performed by a command (sometimes called an operation code or
opcode). The instruction is always the first 8 bits transferred from host system to the memory in any command.
Low. A signal voltage level
 VIL or a logic level representing a binary zero (0).
LSB. Least Significant Bit. Generally the right most bit, with the lowest order of magnitude value, within a group of bits of a
register or data value.
MSB. Most Significant Bit. Generally the left most bit, with the highest order of magnitude value, within a group of bits of a
register or data value.
Non-Volatile. No power is needed to maintain data stored in the memory.
OPN. Ordering Part Number. The alphanumeric string specifying the memory device type, density, package, factory non-volatile
configuration, etc. used to select the desired device.
Page. 256-byte aligned and length group of data.
PCB. Printed Circuit Board.
Register Bit References. Are in the format: Register_name[bit_number] or Register_name[bit_range_MSB: bit_range_LSB].
Sector. Erase unit size; all sectors are physically 4-kbytes aligned and length. Depending on the erase command used, groups
of physical sectors may be erased as a larger logical sector of 64 kbytes.
Write. An operation that changes data within volatile or non-volatile registers bits or non-volatile flash memory. When changing
non-volatile data, an erase and reprogramming of any unchanged non-volatile data is done, as part of the operation, such that
the non-volatile data is modified by the write operation, in the same way that volatile data is modified – as a single operation.
The non-volatile data appears to the host system to be updated by the single write command, without the need for separate
commands for erase and reprogram of adjacent, but unaffected data.


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