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S25FL116K Fiches technique(PDF) 6 Page - Cypress Semiconductor |
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S25FL116K Fiches technique(HTML) 6 Page - Cypress Semiconductor |
6 / 90 page Document Number: 002-00497 Rev. *E Page 6 of 90 S25FL116K, S25FL132K, S25FL164K 1.1.2.2 Commands Not Supported The following S25FL-K and S25FL-P commands are not supported: Quad Page PGM (32h) Half-Block Erase 32K (52h) Word read Quad I/O (E7) Octal Word Read Quad I/O (E3h) MFID dual I/O (92h) MFID quad I/O (94h) Read Unique ID (4Bh) 1.1.2.3 New Features The S25FL1-K introduces new features to low density SPI category memories: Variable read latency (number of dummy cycles) for faster initial access time or higher clock rate read commands Industrial Plus and Extended temperature range Volatile configuration option in addition to legacy non-volatile configuration 1.2 Glossary Command. All information transferred between the host system and memory during one period while CS# is low. This includes the instruction (sometimes called an operation code or opcode) and any required address, mode bits, latency cycles, or data. Flash. The name for a type of Electrical Erase Programmable Read Only Memory (EEPROM) that erases large blocks of memory bits in parallel, making the erase operation much faster than early EEPROM. High. A signal voltage level ≥ VIH or a logic level representing a binary one (1). Instruction. The 8-bit code indicating the function to be performed by a command (sometimes called an operation code or opcode). The instruction is always the first 8 bits transferred from host system to the memory in any command. Low. A signal voltage level VIL or a logic level representing a binary zero (0). LSB. Least Significant Bit. Generally the right most bit, with the lowest order of magnitude value, within a group of bits of a register or data value. MSB. Most Significant Bit. Generally the left most bit, with the highest order of magnitude value, within a group of bits of a register or data value. Non-Volatile. No power is needed to maintain data stored in the memory. OPN. Ordering Part Number. The alphanumeric string specifying the memory device type, density, package, factory non-volatile configuration, etc. used to select the desired device. Page. 256-byte aligned and length group of data. PCB. Printed Circuit Board. Register Bit References. Are in the format: Register_name[bit_number] or Register_name[bit_range_MSB: bit_range_LSB]. Sector. Erase unit size; all sectors are physically 4-kbytes aligned and length. Depending on the erase command used, groups of physical sectors may be erased as a larger logical sector of 64 kbytes. Write. An operation that changes data within volatile or non-volatile registers bits or non-volatile flash memory. When changing non-volatile data, an erase and reprogramming of any unchanged non-volatile data is done, as part of the operation, such that the non-volatile data is modified by the write operation, in the same way that volatile data is modified – as a single operation. The non-volatile data appears to the host system to be updated by the single write command, without the need for separate commands for erase and reprogram of adjacent, but unaffected data. |
Numéro de pièce similaire - S25FL116K |
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Description similaire - S25FL116K |
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