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AUIRLU024Z Fiches technique(PDF) 1 Page - Infineon Technologies AG

No de pièce AUIRLU024Z
Description  AUTOMOTIVE GRADE
Download  12 Pages
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Fabricant  INFINEON [Infineon Technologies AG]
Site Internet  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

AUIRLU024Z Fiches technique(HTML) 1 Page - Infineon Technologies AG

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AUIRLR024Z
AUIRLU024Z
VDSS
55V
RDS(on)
typ.
46m

ID
16A
max.
58m

Features
 Logic Level
 Advanced Process Technology
 Ultra Low On-Resistance
 175°C Operating Temperature
 Fast Switching
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
 Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide
variety of other applications.
1
2015-12-11
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
 
AUTOMOTIVE GRADE
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
16
A
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
11
IDM
Pulsed Drain Current 
64
PD @TC = 25°C
Maximum Power Dissipation
35
W
Linear Derating Factor
0.23
W/°C
VGS
Gate-to-Source Voltage
± 16
V
EAS
Single Pulse Avalanche Energy (Thermally Limited) 
25
mJ
EAS (Tested)
Single Pulse Avalanche Energy Tested Value 
25
IAR
Avalanche Current 
See Fig.15,16, 12a, 12b
A
EAR
Repetitive Avalanche Energy 
mJ
TJ
Operating Junction and
-55 to + 175
 
TSTG
Storage Temperature Range
°C 
Soldering Temperature, for 10 seconds (1.6mm from case)
300
 
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
Thermal Resistance  
Symbol
Parameter
Typ.
Max.
Units
RJC
Junction-to-Case 
–––
4.28
°C/W
RJA
Junction-to-Ambient ( PCB Mount) 
–––
50
RJA
Junction-to-Ambient
–––
110
D-Pak
AUIRLR024Z
Base part number
Package Type
Standard Pack
Orderable Part Number
Form
Quantity
AUIRLU024Z
I-Pak
Tube
75
AUIRLU024Z
AUIRLR024Z 
Tube
75
AUIRLR024Z
Tape and Reel Left
3000
AUIRLR024ZTRL
D-Pak  
G
D
S
Gate
Drain
Source
S
G
D
HEXFET® Power MOSFET
G
I-Pak
AUIRLU024Z
S
D
D


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