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AUIRLU024Z Fiches technique(PDF) 1 Page - Infineon Technologies AG |
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AUIRLU024Z Fiches technique(HTML) 1 Page - Infineon Technologies AG |
1 / 12 page AUIRLR024Z AUIRLU024Z VDSS 55V RDS(on) typ. 46m ID 16A max. 58m Features Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. 1 2015-12-11 HEXFET® is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com AUTOMOTIVE GRADE Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 16 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 11 IDM Pulsed Drain Current 64 PD @TC = 25°C Maximum Power Dissipation 35 W Linear Derating Factor 0.23 W/°C VGS Gate-to-Source Voltage ± 16 V EAS Single Pulse Avalanche Energy (Thermally Limited) 25 mJ EAS (Tested) Single Pulse Avalanche Energy Tested Value 25 IAR Avalanche Current See Fig.15,16, 12a, 12b A EAR Repetitive Avalanche Energy mJ TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds (1.6mm from case) 300 Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless Thermal Resistance Symbol Parameter Typ. Max. Units RJC Junction-to-Case ––– 4.28 °C/W RJA Junction-to-Ambient ( PCB Mount) ––– 50 RJA Junction-to-Ambient ––– 110 D-Pak AUIRLR024Z Base part number Package Type Standard Pack Orderable Part Number Form Quantity AUIRLU024Z I-Pak Tube 75 AUIRLU024Z AUIRLR024Z Tube 75 AUIRLR024Z Tape and Reel Left 3000 AUIRLR024ZTRL D-Pak G D S Gate Drain Source S G D HEXFET® Power MOSFET G I-Pak AUIRLU024Z S D D |
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