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BFP720_12 Datasheet(Fiches technique) 17 Page - Infineon Technologies AG

Numéro de pièce BFP720_12
Description  Low Noise Silicon Germanium Bipolar RF Transistor
Télécharger  25 Pages
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Fabricant  INFINEON [Infineon Technologies AG]
Site Internet  http://www.infineon.com
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BFP720
Electrical Characteristics
Data Sheet
17
Revision 1.1, 2012-10-19
Notes
1. G
ms = IS21 / S12I for k < 1; Gma = IS21 / S12I(k-(k
2-1)1/2) for k > 1
2. In order to get the NF
min values stated in this chapter the test fixture losses have been subtracted from all
measured results
Table 5-10 AC Characteristics,
V
CE = 3 V, f = 5.5 GHz
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
Maximum Power Gain
Low noise operation point
High linearity operation point
Gms
Gma
19
19.5
dB
IC =5mA
IC =13mA
Transducer Gain
Low noise operation point
High linearity operation point
S21
S21
15
16
dB
ZS = ZL = 50
IC =5mA
IC =13mA
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
0.7
15
dB
ZS = Zopt
IC =5mA
IC =5mA
Linearity
1 dB gain compression point
3rd order intercept point
OP1dB
OIP3
8.5
23
dBm
ZS = ZL = 50
IC =13mA
IC =13mA
Table 5-11 AC Characteristics,
V
CE = 3 V, f = 10 GHz
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
Maximum Power Gain
Low noise operation point
High linearity operation point
Gma
Gma
13.5
15
dB
IC =5mA
IC =13mA
Transducer Gain
Low noise operation point
High linearity operation point
S21
S21
9
10
dB
ZS = ZL = 50
IC =5mA
IC =13mA
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
0.95
10.5
dB
ZS = Zopt
IC =5mA
IC =5mA
Linearity
1 dB gain compression point
3rd order intercept point
OP1dB
OIP3
8
19.5
dBm
ZS = ZL = 50
IC =13mA
IC =13mA




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