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BFP740ESD Fiches technique(PDF) 15 Page - Infineon Technologies AG

No de pièce BFP740ESD
Description  Robust Low Noise Silicon Germanium Bipolar RF Transistor
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Fabricant  INFINEON [Infineon Technologies AG]
Site Internet  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BFP740ESD Fiches technique(HTML) 15 Page - Infineon Technologies AG

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BFP740ESD
Electrical Characteristics
Data Sheet
15
Revision 1.1, 2012-10-08
Table 5-8
AC Characteristics,
V
CE = 3 V, f = 2.4 GHz
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
Maximum power gain
dB
Low noise operation point
Gms
–22
IC =6mA
High linearity operation point
Gms
–25.5
IC =25mA
Transducer gain
dB
ZS = ZL =50 Ω
Low noise operation point
S21
–19.5
IC =6mA
High linearity operation point
S21
–22
IC =25mA
Minimum noise figure
dB
ZS = Zopt
Minimum noise figure
NFmin
–0.65
IC =6mA
Associated gain
Gass
–20
IC =6mA
Linearity
dBm
ZS = ZL =50 Ω
1 dB gain compression point
OP1dB
–10.5
IC =25mA
3rd order intercept point
OIP3
–25
IC =25mA
Table 5-9
AC Characteristics,
V
CE = 3 V, f = 3.5 GHz
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
Maximum power gain
dB
Low noise operation point
Gms
–20.5
IC =6mA
High linearity operation point
Gms
–23
IC =25mA
Transducer gain
dB
ZS = ZL =50 Ω
Low noise operation point
S21
–17
IC =6mA
High linearity operation point
S21
–19
IC =25mA
Minimum noise figure
dB
ZS = Zopt
Minimum noise figure
NFmin
–0.7
IC =6mA
Associated gain
Gass
–16.5
IC =6mA
Linearity
dBm
ZS = ZL =50 Ω
1 dB gain compression point
OP1dB
–10.5
IC =25mA
3rd order intercept point
OIP3
–24.5
IC =25mA


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