BFP740ESD datasheet(9/28 Pages) INFINEON

No de pièce	BFP740ESD

Description	Robust Low Noise Silicon Germanium Bipolar RF Transistor

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BFP740ESD

Maximum Ratings

Data Sheet

9

Revision 1.1, 2012-10-08

3

Maximum Ratings

Attention: Stresses above the max. values listed here may cause permanent damage to the device.

Exposure to absolute maximum rating conditions for extended periods may affect device

reliability. Maximum ratings are absolute ratings; exceeding only one of these values may

cause irreversible damage to the integrated circuit.

Table 3-1

Maximum Ratings at

T

A = 25 °C (unless otherwise specified)

Parameter

Symbol

Values

Unit

Note / Test Condition

Min.

Max.

Collector emitter voltage

VCEO

Open base

–4.2

V

TA = 25 °C

–3.7

V

TA = -55 °C

Collector emitter voltage1)

1) Low VCBO due to integrated protection circuits

VCBO

Open emitter

–4.9

V

TA = 25 °C

–4.4

V

TA = -55 °C

Collector emitter voltage2)

2) VCES is identical to VCEO due to integrated protection circuits.

VCES

E-B short circuited

–4.2

V

TA = 25 °C

–3.7

V

TA = -55 °C

Base current3)

3) Sustainable reverse bias current is high due to integrated protection circuits.

IB

-10

5

mA

–

Collector current

IC

–45

mA

–

RF input power4)

4) RF input power is high due to integrated protection circuits.

PRFin

–21

dBm

–

ESD stress pulse5)

5) ESD robustness is high due to integrated protection circuits.

VESD

-2

2

kV

HBM, all pins, acc. to

JESD22-A114

Total power dissipation6)

6) TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the pcb.

Ptot

–160

mW

TS ≤ 98 °C

Junction temperature

TJ

–150

°C

–

Storage temperature

TStg

-55

150

°C

–

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