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BFP740ESD Fiches technique(PDF) 9 Page - Infineon Technologies AG |
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BFP740ESD Fiches technique(HTML) 9 Page - Infineon Technologies AG |
9 / 28 page BFP740ESD Maximum Ratings Data Sheet 9 Revision 1.1, 2012-10-08 3 Maximum Ratings Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Table 3-1 Maximum Ratings at T A = 25 °C (unless otherwise specified) Parameter Symbol Values Unit Note / Test Condition Min. Max. Collector emitter voltage VCEO Open base –4.2 V TA = 25 °C –3.7 V TA = -55 °C Collector emitter voltage1) 1) Low VCBO due to integrated protection circuits VCBO Open emitter –4.9 V TA = 25 °C –4.4 V TA = -55 °C Collector emitter voltage2) 2) VCES is identical to VCEO due to integrated protection circuits. VCES E-B short circuited –4.2 V TA = 25 °C –3.7 V TA = -55 °C Base current3) 3) Sustainable reverse bias current is high due to integrated protection circuits. IB -10 5 mA – Collector current IC –45 mA – RF input power4) 4) RF input power is high due to integrated protection circuits. PRFin –21 dBm – ESD stress pulse5) 5) ESD robustness is high due to integrated protection circuits. VESD -2 2 kV HBM, all pins, acc. to JESD22-A114 Total power dissipation6) 6) TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the pcb. Ptot –160 mW TS ≤ 98 °C Junction temperature TJ –150 °C – Storage temperature TStg -55 150 °C – |
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