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SMP1008-01WTG Fiches technique(PDF) 2 Page - Sangdest Microelectronic (Nanjing) Co., Ltd |
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SMP1008-01WTG Fiches technique(HTML) 2 Page - Sangdest Microelectronic (Nanjing) Co., Ltd |
2 / 5 page Technical Data Green Products Data Sheet N1767 Rev.- • China - Germany - Korea - Singapore - United States • • http://www.smc-diodes.com - sales@ smc-diodes.com • SMP1008-01WTG Ordering Information: Device Package Marking Min. Order Qty. SMP1008-01WTG 0201 Flipship X 10000 Absolute Maximum Ratings: CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Thermal Information: Electrical Characteristics: (TOP=25°C) Characteristics Symbol Condition Min. Typ. Max. Units Reverse Stand-Off Voltage VRWM - - - 6.0 V Breakdown Voltage VBR IR = 1mA - 7.0 8.5 V Reverse Leakage Current ILEAK VR =5V with 1pin at GND - 0.1 - μA Clamping Voltage 1 VC IPP = 1A, tp=8/20μs, Fwd - 10.7 - V IPP = 2A, tp=8/20μs, Fwd 12.0 - V ESD With stand Voltage 1 VESD IEC61000-4-2 (Contact Discharge) ± 15 - - kV IEC61000-4-2 (Air Discharge) ± 15 - - kV Dynamic Resistance RDYN (VC2-VC1)/(IPP2-IPP1) - 1.3 - Ω Junction Capacitance 1 CD Reverse Bias=0V - 9 - pF Reverse Bias=5.0V - 6 9 Note: 1. Parameter is guaranteed by design and/or device characterization. Parameter Symbol Value Unit Peak Pulse Current (tp=8/20μs) IPP 2.5 A Operating Temperature TOP -40 to + 85 °C Storage Temperature TSTOR -60 to + 150 °C Parameter Value Unit Storage Temperature Range -65 to + 150 °C Maximum Junction Temperature 150 °C Maximum Lead Temperature (Soldering 20-40s) 260 °C |
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