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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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MTB030N10RQ8 Fiches technique(PDF) 2 Page - Cystech Electonics Corp. |
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MTB030N10RQ8 Fiches technique(HTML) 2 Page - Cystech Electonics Corp. |
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2 / 9 page  CYStech Electronics Corp. Spec. No. : C053Q8 Issued Date : 2016.11.04 Revised Date : Page No. : 2/9 MTB030N10RQ8 CYStek Product Specification Absolute Maximum Ratings (Tc=25 °C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 V Continuous Drain Current @ TA=25 °C, VGS=10V 6.2 Continuous Drain Current @ TA=70 °C, VGS=10V ID 5.0 Pulsed Drain Current IDM 25 *1 Avalanche Current @ L=0.1mH IAS 25 A Avalanche Energy @ L=2mH, ID=12A, VDD=25V EAS 144 *3 Repetitive Avalanche Energy @ L=0.05mH EAR 1.6 *2 mJ TA=25 °C 3.1 Total Power Dissipation TA=70 °C PD 2 W Operating Junction and Storage Temperature Tj, Tstg -55~+150 °C Note : *1 . Pulse width limited by maximum junction temperature *2. Duty cycle ≤ 1% *3. 100% tested by conditions of L=2mH, IAS=7A, VGS=10V, VDD=25V Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case RθJC 20 Thermal Resistance, Junction-to-ambient (Note) RθJA 40 °C/W Note : 40°C / W when mounted on a 1 in2 pad of 2 oz copper, t≤10s; 125°C/W when mounted on minimum pad. Characteristics (TC=25 °C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 100 - - VGS=0V, ID=250μA VGS(th) 1 - 2.5 V VDS = VGS, ID=250μA GFS - 12 - S VDS =10V, ID=5A IGSS - - ± 100 nA VGS=±20V - - 1 VDS =80V, VGS =0V IDSS - - 25 μA VDS =80V, VGS =0V, Tj=125 °C - 22.7 30 VGS =10V, ID=10A *RDS(ON) - 27.5 37 mΩ VGS =4.5V, ID=8A Dynamic Qg *1, 2 - 28 - Qgs *1, 2 - 4.2 - Qgd *1, 2 - 6.7 - nC VDS=80V, VGS=10V, ID=10A Ciss - 1378 - Coss - 120 - Crss - 19 - pF VDS=30V, VGS=0V, f=1MHz |
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Description similaire - MTB030N10RQ8 |
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