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MC100EPT24DTG Fiches technique(PDF) 3 Page - ON Semiconductor

No de pièce MC100EPT24DTG
Description  LVTTL/LVCMOS to Differential LVECL Translator
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Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MC100EPT24DTG Fiches technique(HTML) 3 Page - ON Semiconductor

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MC100EPT24
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Table 3. MAXIMUM RATINGS
Symbol
Parameter
Condition 1
Condition 2
Rating
Unit
VCC
Positive Power Supply
GND = 0 V
VEE = −3.3V
3.8
V
VEE
Negative Power Supply
GND = 0 V
VCC = 3.3V
−3.8
V
VIN
Input Voltage
GND = 0 V
VI ≤ VCC
0 to VCC
V
Iout
Output Current
Continuous
Surge
50
100
mA
TA
Operating Temperature Range
−40 to +85
°C
Tstg
Storage Temperature Range
−65 to +150
°C
qJA
Thermal Resistance (Junction-to-Ambient)
0 lfpm
50 lfpm
SOIC−8 NB
SOIC−8 NB
190
130
°C/W
qJC
Thermal Resistance (Junction-to-Case)
Standard Board
SOIC−8 NB
41 to 44
°C/W
qJA
Thermal Resistance (Junction-to-Ambient)
0 lfpm
50 lfpm
TSSOP−8
TSSOP−8
185
140
°C/W
qJC
Thermal Resistance (Junction-to-Case)
Standard Board
TSSOP−8
41 to 44
°C/W
qJA
Thermal Resistance (Junction-to-Ambient)
0 lfpm
50 lfpm
DFN8
DFN8
129
84
°C/W
Tsol
Wave Solder (Pb-Free)
265
°C
qJC
Thermal Resistance (Junction-to-Case)
(Note 1)
DFN8
35 to 40
°C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. JEDEC standard multilayer board − 2S2P (2 signal, 2 power)
Table 4. LVTTL INPUT DC CHARACTERISTICS (VCC = 3.3 V, VEE = −3.6 V to −3.0 V, GND = 0.0 V; TA = −40°C to 85°C)
Symbol
Characteristic
Condition
Min
Typ
Max
Unit
IIH
Input HIGH Current
VIN = 2.7 V
20
mA
IIHH
Input HIGH Current HIGH Voltage
VCC = VIN = 3.8 V
100
mA
IIL
Input LOW Current
VIN = 0.5 V
−0.6
mA
VIK
Input Clamp Voltage
IIN = −18 mA
−1.0
V
VIH
Input HIGH Voltage
2.0
V
VIL
Input LOW Voltage
0.8
V
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 50 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
Table 5. NECL OUTPUT DC CHARACTERISTICS (VCC = 3.3 V, VEE = −3.3 V, GND = 0.0 V (Note 1))
Symbol
Characteristic
−40°C
25°C
85°C
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
VOH
Output HIGH Voltage (Note 2)
-1145
−1020
-895
-1145
−1020
-895
-1145
−1030
-895
mV
VOL
Output LOW Voltage (Note 2)
-1945
−1820
-1695
-1945
−1820
-1695
-1945
−1820
-1695
mV
ICC
Positive Power Supply Current
2.0
4.0
2.0
4.0
2.0
4.0
mA
IEE
Negative Power Supply Current
20
30
38
20
30
38
20
30
38
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 50 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
1. Output levels will vary 1:1 with GND. VEE can vary ± 0.3 V.
2. Outputs are terminated through a 50 W resistor to GND − 2V.


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