MC100EPT23DG datasheet(4/8 Pages) ONSEMI

No de pièce	MC100EPT23DG

Description	3.3 V Dual Differential LVPECL/LVDS/CML to LVTTL/LVCMOS Translator

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MC100EPT23

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Table 4. PECL DC CHARACTERISTICS (VCC = 3.3 V, GND = 0 V (Note 1))

Symbol

Characteristic

−40°C

25°C

85°C

Unit

Min

Typ

Max

Min

Typ

Max

Min

Typ

Max

ICCH

Power Supply Current (Outputs set to HIGH)

10

20

35

10

20

35

10

20

35

mA

ICCL

Power Supply Current (Outputs set to LOW)

15

27

40

15

27

40

15

27

40

mA

VIH

Input HIGH Voltage

2075

2420

2075

2420

2075

2420

mV

VIL

Input LOW Voltage

1355

1675

1355

1675

1355

1675

mV

VIHCMR

Input HIGH Voltage Common Mode Range

(Note 2)

1.2

3.3

1.2

3.3

1.2

3.3

V

IIH

Input HIGH Current

150

mA

IIL

Input LOW Current

D

−150

0.5

mA

NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit

board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared

operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit

values are applied individually under normal operating conditions and not valid simultaneously.

1. All values vary 1:1 with VCC.

2. VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential

input signal.

Table 5. LVTTL/LVCMOS OUTPUT DC CHARACTERISTICS (VCC = 3.3 V, GND = 0.0 V, TA = −40°C to 85°C)

Symbol

Characteristic

Condition

Min

Typ

Max

Unit

VOH

Output HIGH Voltage

IOH = −3.0 mA

2.4

V

VOL

Output LOW Voltage

IOL = 24 mA

0.5

V

IOS

Output Short Circuit Current

−180

−50

mA

NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit

board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared

operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit

values are applied individually under normal operating conditions and not valid simultaneously.

Table 6. AC CHARACTERISTICS (VCC = 3.0 V to 3.6 V, GND = 0.0 V (Note 1))

Symbol

Characteristic

−40°C

25°C

85°C

Unit

Min

Typ

Max

Min

Typ

Max

Min

Typ

Max

fmax

Maximum Frequency (Figure 2)

275

350

275

350

275

350

MHz

tPLH,

tPHL

Propagation Delay to

Output Differential (Note 2)

1.1

1.5

1.8

1.1

1.5

1.8

1.1

1.5

1.8

ns

tSK+ +

tSK− −

tSKPP

Output-to-Output Skew++

Output-to-Output Skew−−

Part-to-Part Skew (Note 3)

15

35

70

60

80

500

15

40

70

80

500

30

40

140

125

80

500

ps

tJITTER

Random Clock Jitter (RMS) (Figure 2)

5

10

5

10

5

10

ps

VPP

Input Voltage Swing (Differential Configuration)

150

800

1200

150

800

1200

150

800

1200

mV

tr tf

Output Rise/Fall Times (0.8 V − 2.0 V)

Q, Q

330

600

900

330

600

900

330

650

900

ps

NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit

board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared

operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit

values are applied individually under normal operating conditions and not valid simultaneously.

1. Measured with a 750 mV 50% duty-cycle clock source. RL = 500 W to GND and CL = 20 pF to GND. Refer to Figure 3.

2. Reference (VCC = 3.3V ± 5%; GND = 0 V)

3. Skews are measured between outputs under identical conditions.

Numéro de pièce similaire - MC100EPT23DG

Fabricant	No de pièce	Fiches technique	Description
ON Semiconductor	MC100EPT23DG	65Kb / 8P	Dual Differential LVPECL to LVTTL Translator February, 2005 ??Rev. 11
ON Semiconductor	MC100EPT23DG	85Kb / 8P	3.3V Dual Differential LVPECL/LVDS/CML to LVTTL/LVCMOS Translator December, 2006 ??Rev. 15

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Description similaire - MC100EPT23DG

Fabricant	No de pièce	Fiches technique	Description
ON Semiconductor	MC100EPT23	85Kb / 8P	3.3V Dual Differential LVPECL/LVDS/CML to LVTTL/LVCMOS Translator December, 2006 ??Rev. 15
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Freescale Semiconductor...	MC100ES60T22	97Kb / 8P	3.3 V Dual LVTTL/LVCMOS to Differential LVPECL Translator
ON Semiconductor	MC100LVELT20	135Kb / 6P	3.3V LVTTL/LVCMOS to Differential LVPECL Translator July, 2016 ??Rev. 1
	MC100EPT22	362Kb / 8P	3.3 V Dual LVTTL/LVCMOS to Differential LVPECL Translator August, 2016 ??Rev. 14
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	MC100LVELT23	137Kb / 8P	3.3 V Dual Differential LVPECL/LVDS to LVTTL Translator December, 2006 ??Rev. 14
	MC100LVELT23	66Kb / 8P	3.3 V Dual Differential LVPECL/LVDS to LVTTL Translator February, 2005 ??Rev. 12
Texas Instruments	SN65LVELT23	271Kb / 10P	[Old version datasheet] 3.3-V Dual Differential LVPECL/LVDS Buffer to LVTTL Translator

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