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MC100EP809FAR2G Fiches technique(PDF) 5 Page - ON Semiconductor

No de pièce MC100EP809FAR2G
Description  Differentia HSTL/PECL/LVDS to HSTL Clock Driver
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Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MC100EP809FAR2G Fiches technique(HTML) 5 Page - ON Semiconductor

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MC100EP809
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Table 6. LVTTL/LVCMOS DC CHARACTERISTICS VCCI = 3.0 V to 3.6 V; VCCO = 1.6 V to 2.0 V, GND = 0 V
Symbol
Characteristic
0
°C
25
°C
85
°C
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
VIH
Input HIGH Voltage
2.0
2.0
2.0
V
VIL
Input LOW Voltage
0.8
0.8
0.8
V
IIH
Input HIGH Current
−150
150
−150
150
−150
150
mA
IIL
Input LOW Current
−300
300
−300
300
−300
300
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm.
Table 7. HSTL DC CHARACTERISTICS VCCI = 3.0 V to 3.6 V; VCCO = 1.6 V to 2.0 V, GND = 0 V
Symbol
Characteristic
0
°C
25
°C
85
°C
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
VOH
Output HIGH Voltage (Note 3)
1.0
1.2
1.0
1.2
1.0
1.2
V
VOL
Output LOW Voltage (Note 3)
0.1
0.4
0.1
0.4
0.1
0.4
V
VIH
Input HIGH Voltage (Figure 6)
VX +
0.1
1.6
VX +
0.1
1.6
VX +
0.1
1.6
V
VIL
Input LOW Voltage (Figure 6)
−0.3
VX
0.1
−0.3
VX
0.1
−0.3
VX
0.1
V
VX
HSTL Input Crossover Voltage
0.68
0.9
0.68
0.9
0.68
0.9
V
IIH
Input HIGH Current
−150
150
−150
150
−150
150
mA
IIL
Input LOW Current
−300
300
−300
300
−300
300
mA
VIHCMR
Input HIGH Voltage Common Mode Range
(Differential Configuration) (Note 4)
HSTL_CLK/HSTL_CLK
0.6
VCCI
− 1.2
0.6
VCCI
− 1.2
0.6
VCCI
− 1.2
V
V
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm.
3. All outputs loaded with 50
W to GND (Figure 7).
4. VIHCMR max varies 1:1 with VCCI. The VIHCMR range is referenced to the most positive side of the differential input signal.


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