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2SCR572D Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce 2SCR572D
Description  isc Silicon NPN Power Transistor
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SCR572D Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
2SCR572D
DESCRIPTION
·
Suitable for middle power drivers
·
Low VCE(sat)
VCE(sat)=0.4V@(IC=2A,IB=0.1A)
·
Complementary NPN types:2SAR572D
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Low frequency amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
30
V
VCEO
Collector-Emitter Voltage
30
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
10
A
PC
Collector Power Dissipation
@ TC=25℃
10
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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