2SD1899-Z datasheet(2/2 Pages) ISC

No de pièce	2SD1899-Z

Description	isc Silicon NPN Power Transistor

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Fabricant	ISC [Inchange Semiconductor Company Limited]

Site Internet	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

2

isc Silicon NPN Power Transistor

2SD1899-Z

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX UNIT

VCE(sat)NOTE

Collector-Emitter Saturation Voltage IC= 1.5A; IB= 150mA

0.25

V

VBE(sat)NOTE

Base-Emitter Saturation Voltage

IC= 1.5A; IB= 150mA

1.2

V

ICBO

Collector Cutoff Current

VCB= 60V; IE= 0

10

μ

A

IEBO

Emitter Cutoff Current

VEB= 7V; IC= 0

10

μ

A

hFE-1NOTE

DC Current Gain

IC= 0.2A; VCE= 2V

60

hFE-2NOTE

DC Current Gain

IC= 0.6A; VCE= 2V

100

400

hFE-3NOTE

DC Current Gain

IC= 2A; VCE= 2V

50

COB

Output Capacitance

IE= 0; VCB= 10V; f= 1.0MHz

30

pF

fT

Current-Gain—Bandwidth Product

IC= 1.5A; VCE= 5V

120

MHz

NOTE:Pulse test PW≤350us,duty cycle ≤2%/pulse



hFE-2 Classifications

M

L

K

100-200

160-320 200-400

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