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KSB834W Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited

No de pièce KSB834W
Description  isc Silicon PNP Power Transistor
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

KSB834W Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited

  KSB834W Datasheet HTML 1Page - Inchange Semiconductor Company Limited KSB834W Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
2
isc Silicon PNP Power Transistor
KSB834W
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -3.0A; IB= -300mA
-1
V
VBE(on)
Base-Emitter On Voltage
IC= -0.5A; VCE=-5V
-1
V
ICBO
Collector Cutoff Current
VCB= -60V; IE= 0
-100
μ
A
IEBO
Emitter Cutoff Current
VEB= -7V; IC= 0
-100
μ
A
hFE1
DC Current Gain
IC=- 0.5A; VCE=- 5V
60
200
hFE2
DC Current Gain
IC= -3A; VCE= -5V
20
fT
Current-Gain—Bandwidth Product
IC= -0.5A; VCE= -5V
9
MHz
Cob
Collector output capacitance
VCB=-10V ,IE=0,f=1MHz
150
pF
hFE-1 Classifications
O
Y
60-120
100-200


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