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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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MTB015N10RI3 Fiches technique(PDF) 2 Page - Cystech Electonics Corp. |
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MTB015N10RI3 Fiches technique(HTML) 2 Page - Cystech Electonics Corp. |
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2 / 8 page  CYStech Electronics Corp. Spec. No. : C053I3 Issued Date : 2016.10.13 Revised Date : Page No. : 2/8 MTB015N10RI3 CYStek Product Specification Absolute Maximum Ratings (TC=25 °C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 V Continuous Drain Current @ VGS=10V, TC=25 °C 46 Continuous Drain Current @ VGS=10V, TC=100 °C ID 29 Pulsed Drain Current (Note 1) IDM 184 Avalanche Current @ L=0.1mH IAS 46 A Avalanche Energy @ L=0.1mH, ID=46A, RG=25Ω (Note 3) EAS 106 Repetitive Avalanche Energy@ L=0.05mH (Note 2) EAR 6 mJ Total Power Dissipation @ TC=25℃ 62.5 Total Power Dissipation @ TC=100℃ PD 25 W Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 °C Note : 1. Pulse width limited by maximum junction temperature. 2. Duty cycle ≤ 1%. 3. 100% tested by conditions of L=0.1mH, VGS=10V, IAS=24A, VDD=25V Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 2 Thermal Resistance, Junction-to-ambient, max Rth,j-a 110 °C/W Characteristics (TC=25 °C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 100 - - VGS=0V, ID=250μA VGS(th) 1 - 3 V VDS = VGS, ID=250μA IGSS - - ± 100 nA VGS=±20V, VDS=0V - - 1 VDS =80V, VGS =0V IDSS - - 25 μA VDS =80V, VGS =0V, Tj=125 °C - 13.5 16.6 VGS =10V, ID=20A *RDS(ON) - 16.0 22.5 mΩ VGS =4.5V, ID=20A *GFS - 32.2 - S VDS =10V, ID=20A Dynamic *Qg - 54.4 - *Qgs - 7.7 - *Qgd - 10.7 - nC VDS=80V, ID=20A, VGS=10V *td(ON) - 16.6 - *tr - 18 - *td(OFF) - 59.6 - *tf - 6.6 - ns VDS=50V, ID=20A, VGS=10V, RGS=1Ω |
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Description similaire - MTB015N10RI3 |
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