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MTB040P04Q8 Fiches technique(PDF) 2 Page - Cystech Electonics Corp. |
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MTB040P04Q8 Fiches technique(HTML) 2 Page - Cystech Electonics Corp. |
2 / 9 page CYStech Electronics Corp. Spec. No. : C967Q8 Issued Date : 2016.09.21 Revised Date : Page No. : 2/9 MTB040P04Q8 CYStek Product Specification Absolute Maximum Ratings (Ta=25 °C) Parameter Symbol Limits Unit Drain-Source Breakdown Voltage BVDSS -40 Gate-Source Voltage VGS ±20 V Continuous Drain Current @ VGS=-10V, TA=25°C (Note 1) -6.8 Continuous Drain Current @ VGS=-10V, TA=70°C (Note 1) ID -5.4 Pulsed Drain Current (Note 2) IDM -38 Avalanche Current @ L=0.1mH IAS -28 A Avalanche Energy @ L=2mH, ID=-12A, VDD=-15V (Note 3) EAS 144 mJ TA=25 °C 3.1 Total Power Dissipation (Note 1) TA=70 °C PD 2 W Operating Junction and Storage Temperature Tj, Tstg -55~+150 °C Note : 1.Surface mounted on FR-4 board, t ≤10sec. 2. Pulse width ≤300μs, Duty Cycle≤2% 3.100% tested by conditions of VDD=-15V, VGS=-10V, L=0.5mH, IAS=-12A Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max RθJC 25 Thermal Resistance, Junction-to-ambient, max RθJA 40 (Note ) °C/W Note : Surface mounted on 1 in² copper pad of FR-4 board, pulse width≤10s. Electrical Characteristics (Tj=25 °C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -40 - - VGS=0V, ID=-250μA VGS(th) -1 - -2.5 V VDS=VGS, ID=-250μA IGSS - - ±100 nA VGS=±20V, VDS=0V - - -1 VDS=-32V, VGS=0V IDSS - - -5 μA VDS=-32V, VGS=0V, Tj=55°C - 31 41 ID=-6A, VGS=-10V *RDS(ON) - 41 55 m Ω ID=-5A, VGS=-4.5V *GFS - 8.6 - S VDS=-10V, ID=-5A Dynamic Ciss - 914 - Coss - 69 - Crss - 56 - pF VDS=-30V, VGS=0V, f=1MHz *td(ON) - 6.8 - *tr - 20 - *td(OFF) - 66.6 - *tf - 32.8 - ns VDD=-20V, ID=-6A, VGS=-10V, RG=1Ω |
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