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PN746X Fiches technique(PDF) 73 Page - NXP Semiconductors |
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PN746X Fiches technique(HTML) 73 Page - NXP Semiconductors |
73 / 86 page PN746X_736X All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2016. All rights reserved. Product data sheet COMPANY PUBLIC Rev. 3.1 — 5 April 2016 369231 73 of 86 NXP Semiconductors PN746X_736X NFC Cortex-M0 microcontroller 13.2.7 Clock dynamic characteristics [1] Parameters are valid over operating temperature range unless otherwise specified. [2] Typical ratings are not guaranteed. The values listed are at room temperature (25 C) with nominal supply voltages. Table 69. Dynamic characteristics for USB interface CL = 50 pF; Rpu = 1.5 k on D+ to VBUS Symbol Parameter Conditions Min Typ Max Unit tr rise time 10 % to 90 % 4 - 20 ns tf fall time 10 % to 90 % 4 - 20 ns tFRFM differential rise and fall time matching tr / tf - - 109 % VCRS output signal crossover voltage 1.3 - 2 V tFEOPT source SE0 interval of EOP T = 25 °C; see Figure 40 160 - 175 ns tFDEOP source jitter for differential transition to SE0 transition T = 25 °C; see Figure 40 2- +5 ns tJR1 receiver jitter to next transition T = 25 °C 18.5 - +18.5 ns tJR2 receiver jitter for paired transitions 10 % to 90 %; T = 25 °C 9- +9 ns tFEOPR receiver SE0 interval of EOP must accept as EOP; see Figure 40 82 - - ns Fig 40. USB interface differential data-to-EOP transition skew and EOP width Table 70. Dynamic characteristics for internal oscillators Tamb = 40 C to +80 C Symbol Parameter[1] Conditions Min Typ[2] Max Unit low frequency oscillator fosc(int) internal oscillator frequency VDDP(VBUS) = 3.3 V 300 365 400 kHz high frequency oscillator fosc(int) internal oscillator frequency VDDP(VBUS) = 3.3 V 18 20 22 MHz |
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