TPCF8102 datasheet(6/7 Pages) TOSHIBA

No de pièce	TPCF8102

Description	Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)

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Fabricant	TOSHIBA [Toshiba Semiconductor]

Site Internet	http://www.semicon.toshiba.co.jp/eng

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6 / 7 page

TPCF8102

2004-07-06

6

Pulse width tw (s)

rth – tw

Drain-source voltage VDS (V)

1000

0.1

1 m

10 m

100 m

1

10

100

1

10

100

1000

Device mounted on a glass-epoxy board (a) (Note 2a)

Device mounted on a glass-epoxy board (b) (Note 2b)

Safe operating area

−0.1

−1

−10

−100

−1

−10

−100

10 ms*

ID max (pulsed)*

VDSS max

1 ms*

*

: Single pulse

Ta

= 25°C

Curves must be derated

linearly with increase in

temperature

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TPCF8102 Fiches technique(PDF) 6 Page - Toshiba Semiconductor

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