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TPC8403 Fiches technique(PDF) 10 Page - Toshiba Semiconductor

No de pièce TPC8403
Description  Field Effect Transistor Silicon P/N Channel MOS Type (P Channel U-MOSII/N Channel U-MOSII)
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPC8403 Fiches technique(HTML) 10 Page - Toshiba Semiconductor

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TPC8403
2004-07-06
10
N-channel
rth − tw
Pulse width tw (S)
Drain-source voltage VDS (V)
Safe operating area
0.1
0.001
0.01
0.1
1
10
100
1000
1
0.3
0.5
3
5
10
30
50
100
300
1000
500
(1)
(2)
(3)
(4)
Device mounted on a glass-epoxy board (a) (Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
Single pulse
0.01
0.01
0.1
1
10
100
0.1
1
10
100
* Single pulse
Ta
= 25°C
Curves must be derated linearly
with increase in temperature.
ID max (pulse) *
10 ms *
1 ms *
VDSS max
Single-device value at dual
operation
(Note 3b)


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