SI1305DL datasheet(2/4 Pages) VISHAY

No de pièce	SI1305DL

Description	P-Channel 1.8-V (G-S) MOSFET

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Fabricant	VISHAY [Vishay Siliconix]

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Si1305DL

Vishay Siliconix

www.vishay.com

2-2

Document Number: 71076

S-03721—Rev. C, 07-Apr-03

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 mA

- 0.45

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "8 V

"100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = - 6.4 V, VGS = 0 V

-1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = - 6.4 V, VGS = 0 V, TJ = 70_C

-5

mA

On-State Drain Currenta

ID(on)

VDS = - 5 V, VGS = - 4.5 V

-3

A

VGS = - 4.5 V, ID = - 1 A

0.230

0.280

Drain-Source On-State Resistancea

rDS(on)

VGS = - 2.5 V, ID = - 0.5 A

0.315

0.380

W

DS(on)

VGS = - 1.8 V, ID = - 0.3 A

0.440

0.530

Forward Transconductancea

gfs

VDS = - 5 V, ID = - 1 A

3.5

S

Diode Forward Voltagea

VSD

IS = - 0.3 A, VGS = 0 V

- 1.2

V

Dynamicb

Total Gate Charge

Qg

2.6

4

Gate-Source Charge

Qgs

VDS = - 4 V, VGS = - 4.5 V, ID = - 1 A

0.6

nC

Gate-Drain Charge

Qgd

0.5

Turn-On Delay Time

td(on)

8

15

Rise Time

tr

VDD = - 4 V, RL = 4 W

55

80

Turn-Off Delay Time

td(off)

VDD = - 4 V, RL = 4 W

ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W

17

25

ns

Fall Time

tf

12

20

Source-Drain Reverse Recovery Time

trr

IF = - 1 A, di/dt = 100 A/ms

27

45

Notes

a.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

1

2

3

4

5

6

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0

2

4

6

8

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS = 4.5 V

TC = - 55_C

125

_C

2 V

25

_C

Output Characteristics

Transfer Characteristics

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

1 V

2.5 V

3 V

3.5 V

4 V

1.5 V

Numéro de pièce similaire - SI1305DL

Fabricant	No de pièce	Fiches technique	Description
Vishay Siliconix	SI1305DL	110Kb / 5P	P-Channel 1.8-V (G-S) MOSFET Rev. D, 13-Jun-05
	SI1305DL	109Kb / 5P	P-Channel 1.8-V (G-S) MOSFET S-51075-Rev. D, 13-Jun-05
	SI1305DL-T1	109Kb / 5P	P-Channel 1.8-V (G-S) MOSFET S-51075-Rev. D, 13-Jun-05
	SI1305DL-T1-E3	109Kb / 5P	P-Channel 1.8-V (G-S) MOSFET S-51075-Rev. D, 13-Jun-05
	SI1305DL	110Kb / 5P	P-Channel 1.8-V (G-S) MOSFET Rev. D, 13-Jun-05

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