SI7866DP datasheet(2/4 Pages) VISHAY

No de pièce	SI7866DP

Description	N-Channel 20-V (D-S) MOSFET

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Fabricant	VISHAY [Vishay Siliconix]

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Si7866DP

Vishay Siliconix

New Product

www.vishay.com

2

Document Number: 71848

S-21412—Rev. B, 05-Aug-02

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

0.8

2.1

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

nA

VDS = 16 V, VGS = 0 V

1

m

Zero Gate Voltage Drain Current

IDSS

VDS = 16 V, VGS = 0 V, TJ = 55_C

5

mA

On-State Drain Currenta

ID(on)

VDS w 5 V, VGS = 10 V

30

A

a

VGS = 10 V, ID = 29 A

0.0020

0.0025

W

Drain-Source On-State Resistancea

rDS(on)

VGS = 4.5 V, ID = 25 A

0.0026

0.00375

W

Forward Transconductancea

gfs

VDS = 6 V, ID = 29 A

95

S

Diode Forward Voltagea

VSD

IS = 4.5 A, VGS = 0 V

0.68

1.1

V

Dynamicb

Total Gate Charge

Qg

40

60

Gate-Source Charge

Qgs

VDS = 10 V, VGS = 4.5 V, ID = 29 A

15

nC

Gate-Drain Charge

Qgd

11

Gate Resistance

Rg

1.2

W

Turn-On Delay Time

td(on)

70

100

Rise Time

tr

VDD = 10 V, RL = 10 W

60

90

Turn-Off Delay Time

td(off)

VDD = 10 V, RL = 10 W

ID ^ 1 A, VGEN = 4.5 V, RG = 6 W

105

160

ns

Fall Time

tf

55

85

Source-Drain Reverse Recovery Time

trr

IF = 2.9 A, di/dt = 100 A/ms

65

100

Notes

a.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

10

20

30

40

50

60

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

0

10

20

30

40

50

60

012345

VGS = 10 thru 3 V

25

_C

TC = 125_C

-55

_C

Output Characteristics

Transfer Characteristics

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

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