BUK219-50Y datasheet(5/8 Pages) PHILIPS

No de pièce	BUK219-50Y

Description	PowerMOS transistor TOPFET high side switch

Download	8 Pages

Scroll/Zoom	100%

Fabricant	PHILIPS [NXP Semiconductors]

Site Internet	http://www.nxp.com

Logo

5 / 8 page

Philips Semiconductors

Product Specification

PowerMOS transistor

BUK219-50Y

TOPFET high side switch

UNDERVOLTAGE & OVERVOLTAGE CHARACTERISTICS

Limits are at -40˚C

≤ T

mb ≤ 150˚C and typicals at Tmb = 25 ˚C.

Refer to TRUTH TABLE.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Undervoltage

V

BG(UV)

Low supply threshold voltage

1

2

4.2

5.5

V

∆V

BG(UV)

Hysteresis

-

0.5

-

V

Overvoltage

V

BG(OV)

High supply threshold voltage

2

40

45

50

V

∆V

BG(OV)

Hysteresis

-

1

-

V

TRUTH TABLE

ABNORMAL CONDITIONS

DETECTED

LOAD

INPUT

SUPPLY

LOAD

OUTPUT

STATUS

DESCRIPTION

UV

OV

LC

SC

OT

L

X

OFF

H

off

H

0

ON

H

on & normal

H

0

1

0

ON

L

on & low current detect

H

1

0

X

OFF

H

supply undervoltage lockout

H

0

1

X

0

OFF

H

supply overvoltage shutdown

H

0

1

X

OFF

L

SC tripped

H

0

1

OFF

L

OT shutdown

3

KEY TO ABBREVIATIONS

L

logic low

UV undervoltage

H

logic high

OV overvoltage

X

don’t care

LC

low current or open circuit load

0

condition not present

SC short circuit

1

condition present

OT overtemperature

1 Undervoltage sensor causes the device to switch off and reset.

2 Overvoltage sensor causes the device to switch off to protect its load.

3 The status will continue to indicate OT (even if the input goes low) until the device cools below the reset threshold. Refer to OVERLOAD

PROTECTION CHARACTERISTICS

.

July 2001

5

Rev 2.000

Numéro de pièce similaire - BUK219-50Y

Fabricant	No de pièce	Fiches technique	Description
NXP Semiconductors	BUK210-50Y	197Kb / 13P	PowerMOS transistor TOPFET high side switch November 2002-Rev 2.000
	BUK212-50Y	413Kb / 16P	Single channel high-side TOPFET? Rev. 01-17 March 2003
	BUK212-50Y	418Kb / 16P	Single channel high-side TOPFET? Rev. 01-17 March 2003
	BUK213-50Y	116Kb / 16P	Single channel high-side TOPFET Rev. 02-06 June 2002
	BUK214-50Y	48Kb / 8P	TOPFET high side switch SMD version of BUK209-50Y September 2002-Rev 2.000

More results

Description similaire - BUK219-50Y

Fabricant	No de pièce	Fiches technique	Description
NXP Semiconductors	BUK203-50Y	120Kb / 13P	PowerMOS transistor TOPFET high side switch April 1995 Rev 1.100
	BUK201-50X	126Kb / 13P	PowerMOS transistor TOPFET high side switch July 1996 Rev 1.000
	BUK203-50X	123Kb / 13P	PowerMOS transistor TOPFET high side switch April 1995 1 Rev 1.100
	BUK200-50Y	126Kb / 13P	PowerMOS transistor TOPFET high side switch April 1995 Rev 1.000
	BUK202-50Y	122Kb / 13P	PowerMOS transistor TOPFET high side switch April 1995 Rev 1.100
	PIP3201-A	196Kb / 13P	PowerMOS transistor TOPFET high side switch May 2001 Rev 1.010
	BUK223-50Y	52Kb / 8P	PowerMOS transistor TOPFET high side switch November 2002-Rev 2.000
	BUK201-50Y	124Kb / 13P	PowerMOS transistor TOPFET high side switch July 1996 Rev 1.000
	BUK210-50Y	197Kb / 13P	PowerMOS transistor TOPFET high side switch November 2002-Rev 2.000
	PIP3208-A	48Kb / 8P	PowerMOS transistor TOPFET high side switch July 2001 Rev 1.000

More results

BUK219-50Y Fiches technique(PDF) 5 Page - NXP Semiconductors

BUK219-50Y Fiches technique(HTML) 5 Page - NXP Semiconductors

Numéro de pièce similaire - BUK219-50Y

Description similaire - BUK219-50Y

Html Pages

1 2 3 4 5 6 7 8

Fiches technique Télécharger

Lien URL