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SI1021R Fiches technique(PDF) 4 Page - Vishay Siliconix |
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SI1021R Fiches technique(HTML) 4 Page - Vishay Siliconix |
4 / 4 page Si1021R Vishay Siliconix New Product www.vishay.com 4 Document Number: 71410 S-21120—Rev. C, 01-Jul-02 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 2 4 6 8 10 02468 10 On-Resistance vs. Gate-Source Voltage VGS – Gate-to-Source Voltage (V) ID = 500 mA ID = 200 mA 1.2 1.5 1 100 1000 0.00 0.3 0.6 0.9 TJ = 25_C TJ = 125_C Source-Drain Diode Forward Voltage VSD – Source-to-Drain Voltage (V) 10 TJ = –55_C VGS = 0 V Threshold Voltage Variance Over Temperature –0.3 –0.2 –0.1 –0.0 0.1 0.2 0.3 0.4 0.5 –50 –25 0 25 50 75 100 125 150 ID = 250 mA TJ – Junction Temperature (_C) 10–3 10–2 1 10 600 10–1 10–4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 500_C/W 3. TJM – TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM 0.01 0 1 2.5 3 100 600 0.1 Single Pulse Power, Junction-to-Ambient Time (sec) 1.5 2 0.5 1 10 TA = 25_C |
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