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SI1012R Fiches technique(PDF) 4 Page - Vishay Siliconix |
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SI1012R Fiches technique(HTML) 4 Page - Vishay Siliconix |
4 / 5 page Si1012R/X Vishay Siliconix New Product www.vishay.com 4 Document Number: 71166 S-02464—Rev. A, 25-Oct-00 TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) –0.3 –0.2 –0.1 –0.0 0.1 0.2 0.3 –50 –25 0 25 50 75 100 125 ID = 0.25 mA Threshold Voltage Variance vs. Temperature TJ – Temperature (_C) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 –50 –25 0 25 50 75 100 125 IGSS vs. Temperature TJ – Temperature (_C) 0 1 2 3 4 5 6 7 –50 –25 0 25 50 75 100 125 BVGSS vs. Temperature TJ – Temperature (_C) 10–3 10–2 1 10 600 10–1 10–4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A) Square Wave Pulse Duration (sec) 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 833_C/W 3. TJM – TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM VGS = 4.5 V |
Numéro de pièce similaire - SI1012R |
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Description similaire - SI1012R |
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