LM195QML-SP datasheet(4/16 Pages) TI1

No de pièce	LM195QML-SP

Description	Ultra Reliable Power Transistors

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Fabricant	TI1 [Texas Instruments]

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LM195QML, LM195QML-SP

SNLS194A – NOVEMBER 2010 – REVISED MARCH 2013

www.ti.com

LM195H/883 Electrical Characteristics DC Parameter Base to Emitter

Sub-

Symbol

Parameter

Conditions

Notes

Min

Max

Unit

groups

BVBE

Breakdown Voltage

VCE ≤ 42V

See(1)

42

V

1, 2, 3

1.2

A

1

ISC

Collector Current

VCE ≤ 7V

1

A

2, 3

2

V

1, 2

VSat

Saturation Voltage

IC = 1A

2.5

V

3

0

≤ VBE ≤ 42V,

IB

Base Current

5

µA

1, 2, 3

IC ≤ IMax

IQ

Quiescent Current

VCE = 42V, VBE = 0V

5

mA

1, 2, 3

VC = 46-42V,

-0.03

0.01

V

1

IL = 50mA

VBk

Breakdown Delta VBE

VC = 46-38V

-0.03

0.01

V

1

VC = 50-42V

-0.03

0.01

V

1

Thr

Thermal Response

100µS

-10

100

mV

1

500µS

-10

70

mV

1

2mS

-10

50

mV

1

20mS

-10

10

mV

1

(1)

Parameter tested go

−no−go only.

LM195H/883 Electrical Characteristics AC Parameter

Sub-

Symbol

Parameter

Conditions

Notes

Min

Max

Unit

groups

VI = 0-2V, RL = 36Ω,

tON

Response Time

1.8

µS

9, 10, 11

V+ = 36V

VI = 2-0V, RL = 36Ω,

tOFF

Response Time

1.8

µS

9, 10, 11

V+ = 36V

4

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