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BYD33K Fiches technique(PDF) 2 Page - Diode Semiconductor Korea |
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BYD33K Fiches technique(HTML) 2 Page - Diode Semiconductor Korea |
2 / 2 page 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.02 0.06 0.1 0.2 0.4 1.0 2 4 10 100 TJ=25 Pulse W idth=300 µS 1.8 2.0 1 100 10 5 1 1 0 15 2 0 25 TJ=125 8.3ms Single Half Sine-Wave Single Phase Half Wave 60HZ Resistive or Inductive Load 0.005 0.01 0.05 0.5 1.0 1.5 0.1 0 20 40 60 80 100 120 140 160 180 200 PULSE GENERATOR (NOTE2) D.U.T. 1 N.1. 50 N.1. OSCILLOSCOPE (NOTE 1) (+) 50VDC (APPROX) (-) 10 N.1. (- ) (+ ) -1.0A -0.25A 0 +0.5A trr 1cm 1 0.1 1 0.4 2 4 6 10 40 20 100 60 0.2 2 10 20 40 100 200 4 TJ=25 f=1MHz FIG.5--TYPICAL JUNCTION CAPACITANCE 2.RISETIME=10ns MAX. SOURCEIMPEDANCE=5O FIG.3 --PEAK FORWARD SURGE CURRENT NOTES:1.RISETIME=7ns MAX. INPUTIMPEDANCE=1M .22pF FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM FIG.2 --FORWARD DERATING CURVE INSTANTANEOUS FORWARD VOLTAGE,VOLTS REVERSE VOLTAGE ,VOLTS FIG.4--TYPICAL FORWARD CHARACTERISTIC BYD33D(Z)---BYD33M(Z) SETTIMEBASEFOR50/100 ns /cm AMBIENT TEMPERATURE, NUMBER OF CYCLES AT 60 Hz www.diode.kr Diode Semiconductor Korea |
Numéro de pièce similaire - BYD33K |
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Description similaire - BYD33K |
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