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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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IRF8113 Fiches technique(PDF) 1 Page - International Rectifier |
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IRF8113 Fiches technique(HTML) 1 Page - International Rectifier |
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1 / 10 page  www.irf.com 1 1/5/04 IRF8113 HEXFET® Power MOSFET Notes through
are on page 10 Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Top View 8 1 2 3 4 5 6 7 D D D D G S A S S A SO-8 Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current c PD @TA = 25°C Power Dissipation f W PD @TA = 70°C Power Dissipation f Linear Derating Factor W/°C TJ Operating Junction and °C TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units RθJL Junction-to-Drain Lead g ––– 20 °C/W RθJA Junction-to-Ambient fg ––– 50 Max. 17.2 13.8 135 ± 20 30 -55 to + 150 2.5 0.02 1.6 VDSS RDS(on) max Qg Typ. 30V 5.6m :@V GS = 10V 24nC PD - 94637A |
Numéro de pièce similaire - IRF8113 |
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Description similaire - IRF8113 |
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