VIN

POWER MANAGEMENT

VOUT

GND

µC

GPIO

VDD

GND

TPL5110

VDD

GND

EN/

ONE_SHOT

DRV

DELAY/

M_DRV

DONE

Battery

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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

TPL5110

SNAS650 – JANUARY 2015 – REVISED JANUARY 2015

TPL5110 Nano-power System Timer for Power Gating

1

1 Features

1

•

Supply Voltage from 1.8V to 5.5V

•

Current Consumption at 2.5V 35nA (typ)

•

Selectable Time Intervals 100ms to 7200s

•

Timer Accuracy 1% (typ)

•

Resistor Selectable Time Interval

•

Manual MOSFET Power On

•

One-shot Feature

2 Applications

•

Battery Powered Systems

•

Internet of Things (IoT)

•

Intruder Detection

•

Tamper Detection

•

Home Automation Sensors

•

Thermostats

•

Consumer Electronics

•

Remote Sensor

•

White Goods

3 Description

The TPL5110 Nano Timer is a low power timer with

an integrated MOSFET driver ideal for power gating

in duty cycled or battery powered applications.

Consuming only 35nA, the TPL5110 can enable the

power supply line and drastically reduce the overall

system stand by current during the sleep time. Such

power savings enable the use of significantly smaller

batteries making it well suited for energy harvesting

or

wireless

sensor

applications.

The

TPL5110

provides selectable timing intervals from 100ms to

7200s and is designed for power gating applications.

In addition, the TPL5110 has a unique One-shot

feature where the timer will only power the MOSFET

for one cycle. The TPL5110 is available in a 6-pin

SOT23 package.

Device Information(1)

PART NUMBER

PACKAGE

BODY SIZE (NOM)

TPL5110

SOT23 (6)

3.00 mm x 3.00 mm

(1) For all available packages, see the orderable addendum at

the end of the datasheet.

4 Simplified Application Schematic