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TPIC3302 Fiches technique(PDF) 3 Page - Texas Instruments |
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TPIC3302 Fiches technique(HTML) 3 Page - Texas Instruments |
3 / 12 page TPIC3302 3CHANNEL COMMONDRAIN POWER DMOS ARRAY SLIS021B − APRIL 1994 − REVISED JULY 1995 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251−1443 2−3 resistive-load switching characteristics, TC = 25°C PARAMETER TEST CONDITIONS MIN TYP MAX UNIT td(on) Turn-on delay time 21 42 td(off) Turn-off delay time VDD = 25 V, RL = 50 Ω, ten = 10 ns, 20 40 ns tr Rise time VDD = 25 V, tdis = 10 ns, RL = 50 Ω, See Figure 2 ten = 10 ns, 5 10 ns tf Fall time tdis = 10 ns, See Figure 2 13 26 Qg Total gate charge VDS = 48 V, ID = 0.5 A, VGS = 10 V, 3.1 3.8 Qgs(th) Threshold gate-to-source charge VDS = 48 V, See Figure 3 ID = 0.5 A, VGS = 10 V, 0.4 0.5 nC Qgd Gate-to-drain charge See Figure 3 1.3 1.6 nC LD Internal drain inductance 5 nH LS Internal source inductance 5 nH Rg Internal gate resistance 0.25 Ω thermal resistance PARAMETER TEST CONDITIONS MIN TYP MAX UNIT RθJA Junction-to-ambient thermal resistance All outputs with equal power, See Note 4 130 °C/W RθJP Junction-to-pin thermal resistance All outputs with equal power, See Note 4 44 °C/W NOTE 4: Package mounted on an FR4 printed-circuit board with no heat sink PARAMETER MEASUREMENT INFORMATION 25% of IRM† TJ = 25°C Reverse di/dt = 100 A/ µs trr(SD) IRM† † IRM = maximum recovery current Time − ns 0 25 50 75 100 125 150 1 0.5 0 − 0.5 − 1 − 1.5 − 2 − 2.5 − 3 175 200 225 250 Figure 1. Reverse-Recovery-Current Waveform of Source-to-Drain Diode |
Numéro de pièce similaire - TPIC3302_11 |
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Description similaire - TPIC3302_11 |
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