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TPD3S014-Q1 Fiches technique(PDF) 6 Page - Texas Instruments |
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TPD3S014-Q1 Fiches technique(HTML) 6 Page - Texas Instruments |
6 / 28 page 6 TPD3S014-Q1 SLVSDG5B – MARCH 2016 – REVISED APRIL 2016 www.ti.com Product Folder Links: TPD3S014-Q1 Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated (1) Pulsed testing techniques maintain junction temperature approximately equal to ambient temperature (2) See the Current Limit section for explanation of this parameter. (3) These parameters are provided for reference only, and do not constitute part of TI’s published device specifications for purposes of TI’s product warranty. 6.8 Electrical Characteristics: –40°C ≤ T A ≤ 105°C 4.5 V ≤ VIN ≤ 5.5 V, VEN = VIN, IOUT = 0 A, typical values are at 5 V and 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS(1) MIN TYP MAX UNIT POWER SWITCH RDS(on) Input – output resistance 97 164 m Ω ENABLE INPUT (EN) Threshold Input rising 1 1.45 2 V Hysteresis 0.13 V Leakage current VEN = 0 V –1 0 1 µA tON Turnon time VIN = 5 V, CL = 1 µF, RL = 100 Ω, EN ↑ See Figure 22 1 1.6 2.2 ms tOFF Turnoff time VIN = 5 V, CL = 1 µF, RL = 100 Ω, EN ↓ See Figure 22 1.7 2.1 2.7 ms tR Rise time, output CL = 1 µF, RL = 100 Ω, VIN = 5 V, See Figure 21 0.4 0.64 0.9 ms tF Fall time, output CL = 1 µF, RL = 100 Ω, VIN = 5 V, See Figure 21 0.25 0.4 0.8 ms CURRENT LIMIT IOS (2) Current limit, see Figure 23 0.65 0.85 1.05 A tIOS Short-circuit response time(2) VIN = 5 V (see Figure 23) One Half full load → RSHORT = 50 mΩ Measure from application to when current falls below 120% of final value 2 µs SUPPLY CURRENT ISD Supply current, switch disabled IOUT = 0 A 0.02 10 µA ISE Supply current, switch enabled IOUT = 0 A 66 94 µA IREV Reverse leakage current VOUT = 5.5 V, VIN = 0 V, Measure IVOUT 0.2 20 µA UNDERVOLTAGE LOCKOUT VUVLO Rising threshold VIN↑ 3.5 3.77 4 V Hysteresis VIN↓ 0.14 V OUTPUT DISCHARGE RPD Output pull-down resistance VIN = 4 V, VOUT = 5 V, Disabled 350 545 1200 Ω VIN = 5 V, VOUT = 5 V, Disabled 300 456 800 THERMAL SHUTDOWN TSHDN Rising threshold (TJ) In current limit 135 °C Not in current limit 155 Hysteresis(3) 20 °C ESD PROTECTION II Input leakage current (D1, D2) VI = 3.3 V 0.02 1 µA VD Diode forward voltage (D1, D2); Lower clamp diode IO = 8 mA 0.95 V VBR Breakdown voltage (D1, D2) IBR = 1 mA 6 V |
Numéro de pièce similaire - TPD3S014-Q1 |
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Description similaire - TPD3S014-Q1 |
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