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TPD2E2U06 Fiches technique(PDF) 7 Page - Texas Instruments

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No de pièce TPD2E2U06
Description  Dual-Channel High-Speed ESD Protection Device
Download  17 Pages
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Fabricant  TI1 [Texas Instruments]
Site Internet  http://www.ti.com
Logo TI1 - Texas Instruments

TPD2E2U06 Fiches technique(HTML) 7 Page - Texas Instruments

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GND
IO1
IO2
TPD2E2U06
www.ti.com
SLLSEG9B – JUNE 2013 – REVISED MAY 2015
8 Detailed Description
8.1 Overview
The TPD2E2U06 is a dual-channel low capacitance TVS diode ESD protection device. The device offers ±25-kV
contact and ±30-kV air-gap ESD protection in accordance with the IEC 61000-4-2 standard. The 1.5-pF line
capacitance of the TPD2E2U06 makes the device suitable for a wide range of applications. Typical application
interfaces are USB 2.0, LVDS, and I2C.
8.2 Functional Block Diagram
8.3 Feature Description
The TPD2E2U06 is a dual-channel low capacitance TVS diode ESD protection device. The device offers ±25-kV
contact and ±30-kV air-gap ESD protection in accordance with the IEC 61000-4-2 standard. The 1.5-pF line
capacitance of the TPD2E2U06 makes the device suitable for a wide range of applications. Typical application
interfaces are USB 2.0, LVDS, and I2C.
8.3.1 IEC 61000-4-2 Level 4
The I/O pins can withstand ESD events up to ±25-kV contact and ±30-kV air. An ESD/surge clamp diverts the
current to ground.
8.3.2 IO Capacitance
The capacitance between each I/O pin to ground is 1.5 pF. These capacitances support data rates in excess of
1.5 Gbps.
8.3.3 DC Breakdown Voltage
The DC breakdown voltage of each I/O pin is a minimum of 6.5 V. This ensures that sensitive equipment is
protected from surges above the reverse standoff voltage of 5.5 V.
8.3.4 Ultra-Low Leakage Current
The I/O pins feature an ultra-low leakage current of 10 nA (Max) with a bias of 2.5 V.
8.3.5 Low ESD Clamping Voltage
The I/O pins feature an ESD clamp that is capable of clamping the voltage to 9.7 V (IPP = 1 A).
Copyright © 2013–2015, Texas Instruments Incorporated
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