BUK7626-100B datasheet(8/15 Pages) PHILIPS

No de pièce	BUK7626-100B

Description	TrenchMOS standard level FET

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Fabricant	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

BUK75/7626-100B

TrenchMOS™ standard level FET

Product data

Rev. 01 — 11 April 2003

8 of 15

9397 750 11238

ID = 1 mA; VDS =VGS

Tj =25 °C; VDS =VGS

Fig 9.

Gate-source threshold voltage as a function of

junction temperature.

Fig 10. Sub-threshold drain current as a function of

gate-source voltage.

Tj =25 °C; VDS =25V

VGS = 0 V; f = 1 MHz

Fig 11. Forward transconductance as a function of

drain current; typical values.

Fig 12. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values.

03aa32

0

1

2

3

4

5

-60

0

60

120

180

Tj (°C)

VGS(th)

(V)

max

min

typ

03aa35

10-6

10-5

10-4

10-3

10-2

10-1

02

46

VGS (V)

ID

(A)

max

typ

min

03nm37

0

7

14

21

28

35

0

25

50

75

100

ID (A)

gfs

(S)

03nm42

0

1000

2000

3000

10-2

10-1

1

10

102

VDS (V)

C

(pF)

Ciss

Coss

Crss

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