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MTB110P08KJ3 Fiches technique(PDF) 2 Page - Cystech Electonics Corp.

No de pièce MTB110P08KJ3
Description  P-Channel Enhancement Mode Power MOSFET
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Fabricant  CYSTEKEC [Cystech Electonics Corp.]
Site Internet  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTB110P08KJ3 Fiches technique(HTML) 2 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C123J3
Issued Date : 2016.07.20
Revised Date :
Page No. : 2/9
MTB110P08KJ3
CYStek Product Specification
Absolute Maximum Ratings (TC=25
°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
VDS
-80
Gate-Source Voltage
VGS
±
20
V
Continuous Drain Current @TC=25
°C, VGS=-10V
(Note 1)
-11.3
Continuous Drain Current @TC=100
°C, VGS=-10V
(Note 1)
ID
-7.1
Continuous Drain Current @TA=25
°C, VGS=-10V
(Note 2)
-3.2
Continuous Drain Current @TA=70
°C, VGS=-10V
(Note 2)
IDSM
-2.6
Pulsed Drain Current
(Note 3)
IDM
-45
Avalanche Current
(Note 3)
IAS
-11
A
Avalanche Energy @ L=1mH, ID=-11A, VDD=-25V
EAS
60.5
mJ
ESD susceptibility
(Note 4)
VESD
2000
V
TC=25
°C
(Note 1)
31
TC=100
°C
(Note 1)
PD
12
TA=25
°C
(Note 2)
2.5
Total Power Dissipation
TA=70
°C
(Note 2)
PDSM
1.6
W
Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
°C
* 100% UIS testing in condition of VD=-25V, L=1mH, VG=-10V, IAS=-9A, Rated VDS=-80V
Thermal Data
Parameter
Symbol
Typical
Maximum
Unit
Thermal Resistance, Junction-to-case
RθJC
3.6
4
Thermal Resistance, Junction-to-ambient, t≤10s (Note 2)
15
18
Thermal Resistance, Junction-to-ambient, steady state
RθJA
40
50
°C/W
Note : 1
.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2
. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment
with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of
150°C. The value in any given application depends on the user’s specific board design.
3
. Pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and low duty cycles
to keep initial TJ=25°C.
4. Human body model, 1.5kΩ in series with 100pF.


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