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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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MTB050P10H8 Fiches technique(PDF) 2 Page - Cystech Electonics Corp. |
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MTB050P10H8 Fiches technique(HTML) 2 Page - Cystech Electonics Corp. |
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2 / 11 page  CYStech Electronics Corp. Spec. No. : C975H8 Issued Date : 2016.08.01 Revised Date : Page No. : 2/11 MTB050P10H8 CYStek Product Specification Absolute Maximum Ratings (Ta=25 °C) Parameter Symbol 10s Steady State Unit Drain-Source Voltage VDS -100 Gate-Source Voltage VGS ±20 V Continuous Drain Current @ TC=25 °C, VGS=-10V (Note1) -20 Continuous Drain Current @ TC=100 °C, VGS=-10V (Note1) ID -12.7 Continuous Drain Current @ TA=25 °C, VGS=-10V (Note2) -7.4 -4.4 Continuous Drain Current @ TA=70 °C, VGS=-10V (Note2) IDSM -5.9 -3.5 Pulsed Drain Current (Note3) IDM -80 Avalanche Current@L=1mH (Note4) IAS -20 A Avalanche Energy @ L=2mH, ID=-20A, VDD=-50V (Note4) EAS 400 mJ TC=25℃ (Note1) 42 TC=100℃ (Note1) PD 16.8 TA=25°C (Note2) 5.4 1.9 Total Power Dissipation TA=70°C (Note2) PDSM 3.4 1.2 W Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 °C Thermal Data Parameter Symbol Typical Maximum Unit Thermal Resistance, Junction-to-case Rth,j-c 2.5 3 t≤10s 18 23 Thermal Resistance, Junction-to-ambient (Note2) Steady State Rth,j-a 50 65 °C/W Note : 1 .The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2 . The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design. 3 . Pulse width limited by junction temperature TJ(MAX)=150°C. 4. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 100% tested by conditions of L=1mH, IAS=-20A, VGS=-10V, VDD=-50V. Characteristics (TC=25 °C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -100 - - VGS=0V, ID=-250μA VGS(th) -1 - -2.5 V VDS = VGS, ID=-250μA GFS *1 - 23 - S VDS =-15V, ID=-10A IGSS - - ± 100 nA VGS=±20V - - -1 VDS =-80V, VGS =0V IDSS - - -10 μA VDS =-80V, VGS =0, Tj=70 °C - 39.5 50 VGS =-10V, ID=-15A RDS(ON) *1 - 45.3 60 mΩ VGS =-4.5V, ID=-12A |
Numéro de pièce similaire - MTB050P10H8 |
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Description similaire - MTB050P10H8 |
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