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MTB050P10H8 Fiches technique(PDF) 5 Page - Cystech Electonics Corp. |
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MTB050P10H8 Fiches technique(HTML) 5 Page - Cystech Electonics Corp. |
5 / 11 page CYStech Electronics Corp. Spec. No. : C975H8 Issued Date : 2016.08.01 Revised Date : Page No. : 5/11 MTB050P10H8 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 10 100 1000 10000 0 5 10 15 20 25 30 -VDS, Drain-Source Voltage(V) C oss Ciss Crss Threshold Voltage vs Junction Tempearture 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=-250 μA ID=-1mA Maximum Safe Operating Area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 1000 -VDS, Drain-Source Voltage(V) DC 10ms 100ms 1m 100 μs RDSON Limited TA=25°C, VGS=-10V,Tj=150°C RθJA=65°C/W, Single Pulse 1s Gate Charge Characteristics 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 45 Qg, Total Gate Charge(nC) ID=-15A VDS=-80V Maximum Drain Current vs Junction Temperature 0 1 2 3 4 5 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) TA=25°C, VGS=-10V, RθJA=65°C/W Forward Transfer Admittance vs Drain Current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 -ID, Drain Current(A) Pulsed Ta=25°C VDS=-10V VDS=-15V |
Numéro de pièce similaire - MTB050P10H8 |
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Description similaire - MTB050P10H8 |
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