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KSD1616A Fiches technique(PDF) 1 Page - Fairchild Semiconductor |
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KSD1616A Fiches technique(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T a=25°C unless otherwise noted * PW ≤10ms, Duty Cycle < 50% Electrical Characteristics T a=25°C unless otherwise noted * Pulse Test: PW<350 µs, Duty Cycle≤2% Pulsed hFE1 Classification Symbol Parameter Ratings Units VCBO Collector-Base Voltage : KSD1616 : KSD1616A 60 120 V V VCEO Collector-Emitter Voltage : KSD1616 : KSD1616A 50 60 V V VEBO Emitter-Base Voltage 6 V IC Collector Current (DC) 1 A ICP * Collector Current (Pulse) 2 A PC Collector Power Dissipation 0.75 W TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units ICBO Collector Cut-off Current VCB=60V, IE=0 100 nA IEBO Emitter Cut-off Current VEB=6V, IC=0 100 nA hFE1 hFE2 DC Current Gain : KSD1616 : KSD1616A VCE=2V, IC=100mA VCE=2V, IC=1A 135 135 81 600 400 VBE (on) * Base-Emitter On Voltage VCE=2V, IC=50mA 600 640 700 mV VCE (sat) * Collector-Emitter Saturation Voltage IC=1A, IB=50mA 0.15 0.3 V VBE (sat) * Base-Emitter Saturation Voltage IC=1A, IB=50mA 0.9 1.2 V Cob Output Capacitance VCE=10V, IE=0, f=1MHz 19 pF fT Current Gain Bandwidth Product VCE=2V, IC=100mA 100 160 MHz tON Turn On Time VCC=10V, IC=100mA IB1= -IB2=10mA VBE (off) = -2~-3V 0.07 µs tSTG Storage Time 0.95 µs tF Fall Time 0.07 µs Classification Y G L hFE1 135 ~ 270 200 ~ 400 300 ~ 600 KSD1616/1616A Audio Frequency Power Amplifier & Medium Speed Switching • Complement to KSB1116/1116A 1. Emitter 2. Collector 3. Base TO-92 1 |
Numéro de pièce similaire - KSD1616A |
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Description similaire - KSD1616A |
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