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LM34919 Fiches technique(PDF) 3 Page - Texas Instruments |
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LM34919 Fiches technique(HTML) 3 Page - Texas Instruments |
3 / 21 page LM34919 www.ti.com SNOSAY2E – MAY 2007 – REVISED FEBRUARY 2013 These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Absolute Maximum Ratings (1) VIN to RTN 44V BST to RTN 52V SW to RTN (Steady State) -1.5V ESD Rating, Human Body Model(2) 2kV BST to VCC 44V VIN to SW 44V BST to SW 14V VCC to RTN 14V SGND to RTN -0.3V to +0.3V SS to RTN -0.3V to 4V All Other Inputs to RTN -0.3 to 7V Storage Temperature Range -65°C to +150°C Junction temperature 150°C (1) Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which operation of the device is intended to be functional. For specifications and test conditions, see the Electrical Characteristics. (2) The human body model is a 100pF capacitor discharged through a 1.5k Ω resistor into each pin. Operating Ratings (1) VIN 8.0V to 40V Junction Temperature −40°C to + 125°C (1) Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which operation of the device is intended to be functional. For specifications and test conditions, see the Electrical Characteristics. Copyright © 2007–2013, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Links: LM34919 |
Numéro de pièce similaire - LM34919_15 |
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Description similaire - LM34919_15 |
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