IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXXN200N60C3H1

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Notes:

1. Pulse test, t

≤ 300μs, duty cycle, d ≤ 2%.

2. Switching times & energy losses may increase for higher V

Reverse Sonic Diode (FRD)

Symbol Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

V

F

I

2.5

V

T

2.3

V

I

RM

95

A

t

rr

100

ns

R

thJC

0.70

°C/W

I

T

-d

i

SOT-227B miniBLOC (IXXN)

Symbol Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

I

20

35

S

C

9900

pF

C

oes

V

570

pF

C

res

185

pF

Q

g(on)

315

nC

Q

ge

I

134

nC

Q

gc

98

nC

t

d(on)

47

ns

t

ri

100

ns

E

on

3.0

mJ

t

d(off)

125

ns

t

fi

80

ns

E

1.7

2.6

mJ

t

d(on)

47

ns

t

ri

96

ns

E

on

4.0

mJ

t

d(off)

150

ns

t

fi

90

ns

E

off

2.1

mJ

R

thJC

0.16 °C/W

R

thCS

0.05

°C/W

Inductive load, T

I

V

Note 2

Inductive load, T

I

V

Note 2

PRELIMANARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.