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TIP147T Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited |
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TIP147T Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification 2 isc website:www.iscsemi.cn isc Silicon PNP Darlington Power Transistor TIP147T ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA, IB= 0 -100 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A ,IB= -10mA -2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A ,IB= -40mA -3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -10A ,IB= -40mA -3.5 V V BE(on) Base-Emitter On Voltage IC= -10A ; VCE= -4V -3.0 V ICBO Collector Cutoff current VCB= -100V, IE= 0 -1 mA ICEO Collector Cutoff current VCE= -50V, IB= 0 -2 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -2 mA hFE-1 DC Current Gain IC= -5A ; VCE= -4V 1000 hFE-2 DC Current Gain IC= -10A ; VCE= -4V 500 Switching Times td Delay Time VCC= -30 V, IC= - 5.0 A, IB1= -IB2 = -20 mA; tp= 20μs Duty Cycle≤20% 0.15 μ s tr Rise Time 0.55 μ s tstg Storage Time 2.5 μ s tf Fall Time 2.5 μ s |
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