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CSD18509Q5B Fiches technique(PDF) 3 Page - Texas Instruments

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No de pièce CSD18509Q5B
Description  N-Channel NexFET Power MOSFETs
Download  13 Pages
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Fabricant  TI1 [Texas Instruments]
Site Internet  http://www.ti.com
Logo TI1 - Texas Instruments

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CSD18509Q5B
www.ti.com
SLPS476 – JUNE 2014
5 Specifications
5.1 Electrical Characteristics
(TA = 25°C unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
STATIC CHARACTERISTICS
BVDSS
Drain-to-Source Voltage
VGS = 0 V, ID = 250 μA
40
V
IDSS
Drain-to-Source Leakage Current
VGS = 0 V, VDS = 32 V
1
μA
IGSS
Gate-to-Source Leakage Current
VDS = 0 V, VGS = 20 V
100
nA
VGS(th)
Gate-to-Source Threshold Voltage
VDS = VGS, ID = 250 μA
1.4
1.8
2.2
V
VGS = 4.5 V, ID = 32 A
1.3
1.7
m
RDS(on)
Drain-to-Source On Resistance
VGS = 10 V, ID = 32 A
1
1.2
m
gfs
Transconductance
VDS = 4 V, ID = 32 A
180
S
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
10700
13900
pF
Coss
Output Capacitance
VGS = 0 V, VDS = 20 V, ƒ = 1 MHz
821
1070
pF
Crss
Reverse Transfer Capacitance
272
354
pF
RG
Series Gate Resistance
0.8
1.6
Qg
Gate Charge Total (4.5 V)
70
91
nC
Qg
Gate Charge Total (10 V)
150
195
nC
Qgd
Gate Charge Gate-to-Drain
VDS = 20 V, ID = 32 A
17
nC
Qgs
Gate Charge Gate-to-Source
29
nC
Qg(th)
Gate Charge at Vth
18
nC
Qoss
Output Charge
VDS = 20 V, VGS = 0 V
39
nC
td(on)
Turn On Delay Time
9
ns
tr
Rise Time
19
ns
VDS = 20 V, VGS = 10 V,
IDS = 32 A, RG = 0 Ω
td(off)
Turn Off Delay Time
57
ns
tf
Fall Time
11
ns
DIODE CHARACTERISTICS
VSD
Diode Forward Voltage
ISD = 32 A, VGS = 0 V
0.8
1
V
Qrr
Reverse Recovery Charge
40
nC
VDS= 20 V, IF = 32 A,
di/dt = 300 A/
μs
trr
Reverse Recovery Time
23
ns
5.2 Thermal Information
(TA = 25°C unless otherwise stated)
THERMAL METRIC
MIN
TYP
MAX
UNIT
RθJC
Junction-to-Case Thermal Resistance(1)
0.8
°C/W
RθJA
Junction-to-Ambient Thermal Resistance (1)(2)
50
(1)
RθJC is determined with the device mounted on a 1-inch
2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inches × 1.5-inches (3.81-
cm × 3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board
design.
(2)
Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu.
Copyright © 2014, Texas Instruments Incorporated
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