Moteur de recherche de fiches techniques de composants électroniques |
|
CSD17573Q5BT Fiches technique(PDF) 1 Page - Texas Instruments |
|
|
CSD17573Q5BT Fiches technique(HTML) 1 Page - Texas Instruments |
1 / 13 page 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 2 4 6 8 10 12 14 16 18 20 VGS - Gate-to- Source Voltage (V) TC = 25°C,I D = 35A TC = 125°C,I D = 35A G001 0 1 2 3 4 5 6 7 8 9 10 0 10 20 30 40 50 60 70 80 90 100 110 120 Qg - Gate Charge (nC) ID = 35A VDS = 15V G001 1 D 2 D 3 D 4 D D 5 G 6 S 7 S 8 S P0093-01 Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD17573Q5B SLPS492A – JUNE 2014 – REVISED FEBRUARY 2015 CSD17573Q5B 30 V N-Channel NexFET™ Power MOSFETs 1 Features Product Summary 1 • Low Qg and Qgd TA = 25°C TYPICAL VALUE UNIT • Ultra-Low RDS(on) VDS Drain-to-Source Voltage 30 V • Low Thermal Resistance Qg Gate Charge Total (4.5 V) 49 nC Qgd Gate Charge Gate-to-Drain 11.9 nC • Avalanche Rated VGS = 4.5 V 1.19 m Ω • Pb-Free Terminal Plating RDS(on) Drain-to-Source On-Resistance VGS = 10 V 0.84 m Ω • RoHS Compliant VGS(th) Threshold Voltage 1.4 V • Halogen Free • SON 5 mm × 6 mm Plastic Package Ordering Information(1) Device Qty Media Package Ship 2 Applications CSD17573Q5B 2500 13-Inch Reel SON 5 x 6 mm Tape and Plastic Package Reel • Point-of-Load Synchronous Buck Converter for CSD17573Q5BT 250 7-Inch Reel Applications in Networking, Telecom, and (1) For all available packages, see the orderable addendum at Computing Systems the end of the data sheet. • Optimized for Synchronous FET Applications Absolute Maximum Ratings TA = 25°C VALUE UNIT 3 Description VDS Drain-to-Source Voltage 30 V This 0.84 m Ω, 30 V, SON 5 x 6 NexFET™ power VGS Gate-to-Source Voltage ±20 V MOSFET is designed to minimize losses in power Continuous Drain Current (Package limited) 100 conversion applications. Continuous Drain Current (Silicon limited), ID 332 A TC = 25°C Top View Continuous Drain Current(1) 43 IDM Pulsed Drain Current(2) 400 A Power Dissipation(1) 3.2 PD W Power Dissipation, TC = 25°C 195 TJ, Operating Junction and –55 to 150 °C Tstg Storage Temperature Range Avalanche Energy, single pulse EAS 289 mJ ID = 76, L = 0.1 mH, RG = 25 Ω (1) Typical RθJA = 40°C/W on a 1 inch 2, 2 oz. Cu pad on a 0.06 inch thick FR4 PCB. (2) Max RθJC = 0.8°C/W, pulse duration ≤100 μs, duty cycle ≤1% RDS(on) vs VGS Gate Charge 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. |
Numéro de pièce similaire - CSD17573Q5BT |
|
Description similaire - CSD17573Q5BT |
|
|
Lien URL |
Politique de confidentialité |
ALLDATASHEET.FR |
ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |