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74LVC2G38DP Fiches technique(PDF) 7 Page - NXP Semiconductors |
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74LVC2G38DP Fiches technique(HTML) 7 Page - NXP Semiconductors |
7 / 15 page 2004 Oct 18 7 Philips Semiconductors Product specification Dual 2-input NAND gate (open drain) 74LVC2G38 DC CHARACTERISTICS At recommended operating conditions; voltages are referenced to GND (ground = 0 V). SYMBOL PARAMETER TEST CONDITIONS MIN. TYP. MAX. UNIT OTHER VCC (V) Tamb = −40 °C to +85 °C; note 1 VIH HIGH-level input voltage 1.65 to 1.95 0.65 × VCC −− V 2.3 to 2.7 1.7 −− V 2.7 to 3.6 2.0 −− V 4.5 to 5.5 0.7 × V CC −− V VIL LOW-level input voltage 1.65 to 1.95 −− 0.35 × VCC V 2.3 to 2.7 −− 0.7 V 2.7 to 3.6 −− 0.8 V 4.5 to 5.5 −− 0.3 × VCC V VOL LOW-level output voltage VI =VIH or VIL IO = 100 µA 1.65 to 5.5 −− 0.1 V IO = 4 mA 1.65 − 0.08 0.45 V IO = 8 mA 2.3 − 0.14 0.3 V IO = 12 mA 2.7 − 0.19 0.4 V IO = 24 mA 3.0 − 0.37 0.55 V IO = 32 mA 4.5 − 0.43 0.55 V ILI input leakage current VI = 5.5 V or GND 5.5 −±0.1 ±5 µA Ioff power OFF leakage current VI or VO = 5.5 V 0 −±0.1 ±10 µA ICC quiescent supply current VI =VCC or GND; IO =0A 5.5 − 0.1 10 µA ∆ICC additional quiescent supply current per pin VI =VCC − 0.6 V; IO =0A 2.3 to 5.5 − 5 500 µA |
Numéro de pièce similaire - 74LVC2G38DP |
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Description similaire - 74LVC2G38DP |
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