Moteur de recherche de fiches techniques de composants électroniques |
|
IRF730PBF Fiches technique(PDF) 2 Page - Thinki Semiconductor Co., Ltd. |
|
IRF730PBF Fiches technique(HTML) 2 Page - Thinki Semiconductor Co., Ltd. |
2 / 6 page Electrical Characteristics ( TC = 25 °C unless otherwise noted ) Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA 400 - - V Δ BVDSS/ Δ TJ Breakdown Voltage Temperature coefficient ID = 250uA, referenced to 25 °C - 0.544 - V/°C IDSS Drain-Source Leakage Current VDS = 400V, VGS = 0V -- 1 uA VDS = 320V, TC = 125 °C -- 10 uA IGSS Gate-Source Leakage, Forward VGS = 30V, VDS = 0V -- 100 nA Gate-source Leakage, Reverse VGS = -30V, VDS = 0V - - -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250uA 2.0 - 4.0 V RDS(ON) Static Drain-Source On-state Resis- tance VGS =10 V, ID = 3.25A -0.71 1 Ω Dynamic Characteristics Ciss Input Capacitance VGS =0 V, VDS =25V, f = 1MHz - 575 750 pF Coss Output Capacitance - 165 215 Crss Reverse Transfer Capacitance - 30 40 Dynamic Characteristics td(on) Turn-on Delay Time VDD =200V, ID =6.5A, RG =25Ω ※ see fig. 13. (Note 4, 5) - 28 36 ns tr Rise Time - 74 96 td(off) Turn-off Delay Time - 128 166 tf Fall Time - 38 50 Qg Total Gate Charge VDS =320V, VGS =10V, ID =6.5A ※ see fig. 12. (Note 4, 5) - 32 42 nC Qgs Gate-Source Charge - 13 - Qgd Gate-Drain Charge(Miller Charge) - 4- Source-Drain Diode Ratings and Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit. IS Continuous Source Current Integral Reverse p-n Junction Diode in the MOSFET -- 6.5 A ISM Pulsed Source Current - - 26 VSD Diode Forward Voltage IS =6.5A, VGS =0V - - 1.5 V trr Reverse Recovery Time IS=6.5A, VGS=0V, dIF/dt=100A/us - 320 - ns Qrr Reverse Recovery Charge - 1.46 - uC ※ NOTES 1. Repeativity rating : pulse width limited by junction temperature 2. L = 19.4mH, IAS =6.5A, VDD = 50V, RG =50Ω , Starting TJ = 25°C 3. ISD ≤ 6.5A, di/dt ≤ 300A/us, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2% 5. Essentially independent of operating temperature. ® IRF730PBF © 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 2/6 Rev.05 |
Numéro de pièce similaire - IRF730PBF |
|
Description similaire - IRF730PBF |
|
|
Lien URL |
Politique de confidentialité |
ALLDATASHEET.FR |
ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |