Moteur de recherche de fiches techniques de composants électroniques
  French  ▼
ALLDATASHEET.FR

X  

IRF730PBF Fiches technique(PDF) 2 Page - Thinki Semiconductor Co., Ltd.

No de pièce IRF730PBF
Description  6.5A,400V Heatsink N-Channel Type Power MOSFET
Download  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  THINKISEMI [Thinki Semiconductor Co., Ltd.]
Site Internet  http://www.thinkisemi.com
Logo THINKISEMI - Thinki Semiconductor Co., Ltd.

IRF730PBF Fiches technique(HTML) 2 Page - Thinki Semiconductor Co., Ltd.

  IRF730PBF Datasheet HTML 1Page - Thinki Semiconductor Co., Ltd. IRF730PBF Datasheet HTML 2Page - Thinki Semiconductor Co., Ltd. IRF730PBF Datasheet HTML 3Page - Thinki Semiconductor Co., Ltd. IRF730PBF Datasheet HTML 4Page - Thinki Semiconductor Co., Ltd. IRF730PBF Datasheet HTML 5Page - Thinki Semiconductor Co., Ltd. IRF730PBF Datasheet HTML 6Page - Thinki Semiconductor Co., Ltd.  
Zoom Inzoom in Zoom Outzoom out
 2 / 6 page
background image
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
400
-
-
V
Δ
BVDSS/
Δ
TJ
Breakdown Voltage Temperature
coefficient
ID = 250uA, referenced to 25 °C
-
0.544
-
V/°C
IDSS
Drain-Source Leakage Current
VDS = 400V, VGS = 0V
--
1
uA
VDS = 320V, TC = 125 °C
--
10
uA
IGSS
Gate-Source Leakage, Forward
VGS = 30V, VDS = 0V
--
100
nA
Gate-source Leakage, Reverse
VGS = -30V, VDS = 0V
-
-
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250uA
2.0
-
4.0
V
RDS(ON)
Static Drain-Source On-state Resis-
tance
VGS =10 V, ID = 3.25A
-0.71
1
Dynamic Characteristics
Ciss
Input Capacitance
VGS =0 V, VDS =25V, f = 1MHz
-
575
750
pF
Coss
Output Capacitance
-
165
215
Crss
Reverse Transfer Capacitance
-
30
40
Dynamic Characteristics
td(on)
Turn-on Delay Time
VDD =200V, ID =6.5A, RG =25Ω
※ see fig. 13.
(Note 4, 5)
-
28
36
ns
tr
Rise Time
-
74
96
td(off)
Turn-off Delay Time
-
128
166
tf
Fall Time
-
38
50
Qg
Total Gate Charge
VDS =320V, VGS =10V, ID =6.5A
※ see fig. 12.
(Note 4, 5)
-
32
42
nC
Qgs
Gate-Source Charge
-
13
-
Qgd
Gate-Drain Charge(Miller Charge)
-
4-
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit.
IS
Continuous Source Current
Integral Reverse p-n Junction
Diode in the MOSFET
--
6.5
A
ISM
Pulsed Source Current
-
-
26
VSD
Diode Forward Voltage
IS =6.5A, VGS =0V
-
-
1.5
V
trr
Reverse Recovery Time
IS=6.5A, VGS=0V, dIF/dt=100A/us
-
320
-
ns
Qrr
Reverse Recovery Charge
-
1.46
-
uC
NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L = 19.4mH, IAS =6.5A, VDD = 50V, RG =50Ω , Starting TJ = 25°C
3. ISD ≤ 6.5A, di/dt ≤ 300A/us, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially independent of operating temperature.
®
IRF730PBF
© 2006 Thinki Semiconductor Co., Ltd.
http://www.thinkisemi.com/
Page 2/6
Rev.05


Numéro de pièce similaire - IRF730PBF

FabricantNo de pièceFiches techniqueDescription
logo
International Rectifier
IRF730PBF IRF-IRF730PBF Datasheet
3Mb / 7P
   HEXFET Power MOSFET
logo
Vishay Siliconix
IRF730PBF VISHAY-IRF730PBF Datasheet
134Kb / 8P
   Power MOSFET
Rev. A, 16-Jun-08
IRF730PBF VISHAY-IRF730PBF Datasheet
156Kb / 8P
   Power MOSFET
01-Jan-2022
IRF730PBF-BE3 VISHAY-IRF730PBF-BE3 Datasheet
156Kb / 8P
   Power MOSFET
01-Jan-2022
More results

Description similaire - IRF730PBF

FabricantNo de pièceFiches techniqueDescription
logo
Thinki Semiconductor Co...
IRF740PBF THINKISEMI-IRF740PBF Datasheet
914Kb / 6P
   10A,400V Heatsink N-Channel Type Power MOSFET
logo
Unisonic Technologies
18N40 UTC-18N40 Datasheet
145Kb / 3P
   400V N-CHANNEL POWER MOSFET
logo
Thinki Semiconductor Co...
IRFP150A THINKISEMI-IRFP150A Datasheet
724Kb / 3P
   100V,60A Heatsink N-Channel Type Power MOSFET
IRFP460PBF THINKISEMI-IRFP460PBF Datasheet
1Mb / 6P
   20A,500V Heatsink N-Channel Type Power MOSFET
IRF640PBF THINKISEMI-IRF640PBF Datasheet
1,002Kb / 6P
   18A,200V Heatsink N-Channel Type Power MOSFET
20N50B THINKISEMI-20N50B Datasheet
1Mb / 6P
   20A,500V Heatsink N-Channel Type Power MOSFET
TSP10N60C THINKISEMI-TSP10N60C Datasheet
1,001Kb / 7P
   10.3A,600V Heatsink N-Channel Type Power MOSFET
W20NB50 THINKISEMI-W20NB50 Datasheet
1Mb / 6P
   20A,500V Heatsink N-Channel Type Power MOSFET
IRF630PBF THINKISEMI-IRF630PBF Datasheet
1Mb / 6P
   9A,200V Heatsink N-Channel Type Power MOSFET
IRF830PBF THINKISEMI-IRF830PBF Datasheet
1Mb / 6P
   5.0A,500V Heatsink N-Channel Type Power MOSFET
More results


Html Pages

1 2 3 4 5 6


Fiches technique Télécharger

Go To PDF Page


Lien URL




Politique de confidentialité
ALLDATASHEET.FR
ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com