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IRF234 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IRF234 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor IRF234 DESCRIPTION ·Drain Current ID=8.1A@ TC=25℃ ·Drain Source Voltage- : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.45Ω(Max) ·Nanosecond Switching speeds APPLICATIONS ·Switching power supplies ·Switching converters,motor driver,relay driver ·Drivers for high-power bipolar switching transistors ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 250 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 8.1 A Ptot Total Dissipation@TC=25℃ 75 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.67 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 80 ℃/W PDF pdfFactory Pro www.fineprint.cn |
Numéro de pièce similaire - IRF234 |
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Description similaire - IRF234 |
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