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INCHANGE Semiconductor
isc Product Specification
isc Website:www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
2SC2526
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= 160V(Min)
·Good Linearity of hFE
·Complement to Type 2SA1076
APPLICATIONS
·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
160
V
VCEO
Collector-Emitter Voltage
160
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
12
A
PC
Collector Power Dissipation
@ TC=25℃
120
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃