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IXYH50N65C3H1 Fiches technique(PDF) 2 Page - IXYS Corporation

No de pièce IXYH50N65C3H1
Description  Optimized for 20-60kHz Switching
Download  8 Pages
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Fabricant  IXYS [IXYS Corporation]
Site Internet  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXYH50N65C3H1 Fiches technique(HTML) 2 Page - IXYS Corporation

  IXYH50N65C3H1 Datasheet HTML 1Page - IXYS Corporation IXYH50N65C3H1 Datasheet HTML 2Page - IXYS Corporation IXYH50N65C3H1 Datasheet HTML 3Page - IXYS Corporation IXYH50N65C3H1 Datasheet HTML 4Page - IXYS Corporation IXYH50N65C3H1 Datasheet HTML 5Page - IXYS Corporation IXYH50N65C3H1 Datasheet HTML 6Page - IXYS Corporation IXYH50N65C3H1 Datasheet HTML 7Page - IXYS Corporation IXYH50N65C3H1 Datasheet HTML 8Page - IXYS Corporation  
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IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYH50N65C3H1
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,860,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692
7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
Notes:
1. Pulse test, t
 300μs, duty cycle, d  2%.
2. Switching times & energy losses may increase for higher V
CE(clamp), TJ or RG.
Symbol Test Conditions
Characteristic Values
(T
J = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
g
fs
I
C = 36A, VCE = 10V, Note 1
19
28
S
C
ies
2346
pF
C
oes
V
CE = 25V, VGE = 0V, f = 1MHz
230
pF
C
res
50
pF
Q
g(on)
80
nC
Q
ge
I
C = 36A, VGE = 15V, VCE = 0.5 • VCES
15
nC
Q
gc
40
nC
t
d(on)
22
ns
t
ri
35
ns
E
on
1.30
mJ
t
d(off)
80
ns
t
fi
27
ns
E
off
0.37
mJ
t
d(on)
23
ns
t
ri
33
ns
E
on
1.70
mJ
t
d(off)
100
ns
t
fi
42
ns
E
off
0.56
mJ
R
thJC
0.25 °C/W
R
thCS
0.21
°C/W
Inductive load, T
J = 25°C
I
C = 36A, VGE = 15V
V
CE = 400V, RG = 5
Note 2
Inductive load, T
J = 150°C
I
C = 36A, VGE = 15V
V
CE = 400V, RG = 5
Note 2
1 - Gate
2,4 - Collector
3 - Emitter
TO-247 (IXYH) Outline
Reverse Sonic Diode (FRD)
Symbol Test Conditions
Characteristic Values
(T
J = 25°C Unless Otherwise Specified)
Min. Typ.
Max.
V
F
I
F = 30A, VGE = 0V, Note 1
2.5
V
T
J = 150°C
2.15
V
I
RM
T
J = 150°C
25
A
t
rr
T
J = 150°C
120
ns
R
thJC
0.60 °C/W
I
F = 30A, VGE = 0V,
-di
F/dt = 500A/μs, VR = 300V
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.


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